參數(shù)資料
型號(hào)： P28F020-90
廠(chǎng)商： INTEL CORP
元件分類(lèi)： PROM
英文描述： 28F020 2048K (256K X 8) CMOS FLASH MEMORY
中文描述： 256K X 8 FLASH 12V PROM, 90 ns, PDIP32
封裝： 0.620 X 1.640 INCH, PLASTIC, DIP-32
文件頁(yè)數(shù)： 31/38頁(yè)
文件大小： 878K
代理商： P28F020-90
E
NOTES:
1.
Read timing characteristics during read/write operations are the same as during read-only operations. Refer to AC
Characteristics for Read-Only Operations
2.
Guaranteed by design.
3.
The integrated stop timer terminates the programming/erase operations, thus eliminating the need for a maximum
specification.
4.
See High Speed AC Testing Input/Output Waveform(Figure 8) and High Speed AC Testing Load Circuit(Figure 9) for
testing characteristics.
5.
Minimum Specification for Extended Temperature product.
6.
See Testing Input/Output Waveform(Figure 6) and AC Testing Load Circuit(Figure 7) for testing characteristics.
28F020
31
4.10
Erase and Programming Performance
Limits
Parameter
Notes
Min
Typ
Max
Unit
Chip-Erase Time
1, 3, 4
2
30
Sec
Chip-Program Time
1, 2, 4
4
25
Sec
NOTES:
1.
“Typicals” are not guaranteed, but based on a limited number of samples from production lots. Data taken at 25
°
C, 12.0 V
V
PP
at 0 cycles.
Minimum byte programming time excluding system overhead is 16 μsec (10 μsec program + 6 μsec write recovery), while
maximum is 400 μsec/byte (16 μsec x 25 loops allowed by algorithm). Max chip-programming time is specified lower than
the worst case allowed by the programming algorithm since most bytes program significantly faster than the worst case
byte.
Excludes 00H programming prior to erasure.
Excludes System-Level Overhead.
2.
3.
4.
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