參數(shù)資料
型號(hào): P28F020-90
廠商: INTEL CORP
元件分類: PROM
英文描述: 28F020 2048K (256K X 8) CMOS FLASH MEMORY
中文描述: 256K X 8 FLASH 12V PROM, 90 ns, PDIP32
封裝: 0.620 X 1.640 INCH, PLASTIC, DIP-32
文件頁(yè)數(shù): 23/38頁(yè)
文件大?。?/td> 878K
代理商: P28F020-90
E
4.6
28F020
23
DC Characteristics
—TTL/NMOS Compatible—Extended Temperature
Products
(Continued)
Limits
Symbol
Parameter
Notes
Min
Typ
(3)
Max
Unit
Test Conditions
I
CC3
V
CC
Erase
Current
1, 2
5.0
30
mA
Erasure in
Progress
I
CC4
V
CC
Program
Verify Current
1, 2
5.0
30
mA
V
PP
= V
PPH
Program Verify in
Progress
I
CC5
V
CC
Erase
Verify Current
1, 2
5.0
30
mA
V
PP
= V
PPH
Erase Verify in
Progress
I
PPS
V
PP
Leakage
Current
1
±10
μA
V
PP
V
CC
I
PP1
V
PP
Read
Current, ID
Current or
Standby Current
1
90
200
μA
V
PP
> V
CC
±10
V
PP
V
CC
I
PP2
V
PP
Programming
Current
1, 2
8
30
mA
V
PP
= V
PPH
Programming in
Progress
I
PP3
V
PP
Erase
Current
1, 2
10
30
mA
V
PP
= V
PPH
I
PP4
V
PP
Program
Verify Current
1, 2
2.0
5.0
mA
V
PP
= V
PPH
Program Verify in
Progress
I
PP5
V
PP
Erase
Verify Current
1, 2
2.0
5.0
mA
V
PP
= V
PPH
Erase Verify in
Progress
V
IL
Input Low
Voltage
–0.5
0.8
V
V
IH
Input High
Voltage
2.0
V
CC
+
0.5
V
V
OL
Output Low
Voltage
0.45
V
V
CC
= V
CC
Min
I
OH
= –2.5 mA
V
OH1
Output High
Voltage
2.4
V
V
CC
= V
CC
Min
I
OL
= 5.8 mA
相關(guān)PDF資料
PDF描述
P28F020-120 28F020 2048K (256K X 8) CMOS FLASH MEMORY
P28F020-150 28F020 2048K (256K X 8) CMOS FLASH MEMORY
P28F256A-120 x8 Flash EEPROM
D28F256-170P1C2 x8 Flash EEPROM
D28F256-200P1C2 x8 Flash EEPROM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
P28F-1A-BL 制造商:Carling Technologies 功能描述:P26-SERIES PUSH BUTTON SW - Bulk
P28F-1A-BL/2 HEX 制造商:Carling Technologies 功能描述:P26-SERIES PUSH BUTTON SW - Bulk
P28F-1B-BL 制造商:Carling Technologies 功能描述:P26-SERIES PUSH BUTTON SW - Bulk
P28F-1B-BL-XWL1 制造商:Carling Technologies 功能描述:P26-SERIES PUSH BUTTON SW - Bulk
P28F-1D-BL 制造商:Carling Technologies 功能描述:P26-SERIES PUSH BUTTON SW - Bulk