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參數(shù)資料
| 型號(hào)： | P122 |
| 廠商： | International Rectifier |
| 英文描述： | PASSIVATED ASSEMBLED CIRCUIT ELEMENTS |
| 中文描述： | 鈍化組裝的電路元件 |
| 文件頁數(shù)： | 3/7頁 |
| 文件大小： | 82K |
| 代理商： | P122 |
P100 Series
3
Bulletin I27125 rev. A 04/99
www.irf.com
dv/dt
Maximum critical rate of rise of
off-state voltage
I
RRM
Max. peak reverse and off-state
I
DRM
leakage current at V
RRM
, V
DRM
I
RRM
Max peak reverse leakage current
100
μA
T
J
= 25°C
50Hz, circuit to base, all terminal shorted,
T
J
= 25°C, t = 1s
Blocking
Parameter
P100
Units Conditions
200
V/μs
T
J
= 125°C, exponential to 0.67 V
DRM
gate open
10
mA
T
J
= 125°C, gate open circuit
V
INS
RMS isolation voltage
2500
V
P
GM
P
G(AV)
Maximum average gate power
I
GM
- V
GM
Maximum peak negative
gate voltage
Maximum peak gate power
8
2
Maximum peak gate current
2
A
V
GT
Maximum gate voltage required
3
T
J
= - 40°C
T
J
= 25°C
T
J
= 125°C
to trigger
2
Anode Supply = 6V resistive load
1
I
GD
Maximum gate current
90
T
J
= - 40°C
T
J
= 25°C
T
J
= 125°C
required to trigger
60
mA
Anode Supply = 6V resistive load
35
V
GD
Maximum gate voltage
that will not trigger
I
GD
Maximum gate current
that will not trigger
Parameter
P100
Units Conditions
10
Triggering
W
V
0.2
V
T
J
= 125°C, rated V
DRM
applied
2
mA
T
J
= 125°C, rated V
DRM
applied
T
J
T
stg
R
thJC
Max. operating temperature range
-40 to 125
Max. storage temperature range
-40 to 125
Max. thermal resistance,
2.24
K/W
DC operation per junction
junction to case
R
thCS
Max. thermal resistance,
0.10
K/W
Mounting surface, smooth and greased
case to heatsink
T
Mounting torque, base to heatsink
4
Nm
wt
Approximate weight
58 (2.0)
g (oz)
Parameter
P100
Units
Conditions
Thermal and Mechanical Specification
°C
A mounting compound is recommended and the torque
should be checked after a period of 3 hours to allow for the
spread of the compound
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