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參數(shù)資料
| 型號： | P122 |
| 廠商： | International Rectifier |
| 英文描述： | PASSIVATED ASSEMBLED CIRCUIT ELEMENTS |
| 中文描述： | 鈍化組裝的電路元件 |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 82K |
| 代理商： | P122 |
P100 Series
2
Bulletin I27125 rev. A 04/99
www.irf.com
V
RRM
maximum repetitive
V
maximum non-
repetitive peak reverse
voltage
V
V
maximum
repetitive peak off-state
voltage
V
I
max.
@ T
J
max.
Type number
V
mA
P101, P121, P131
400
500
400
10
P102, P122, P132
600
700
600
P103, P123, P133
800
900
800
P104, P124, P134
1000
1100
1000
P105, P125, P135
1200
1300
1200
ELECTRICAL SPECIFICATIONS
Voltage Ratings
I
D
I
TSM
I
FSM
Maximum DC output current
Max. peak one-cycle
25
357
A
@ T
C
= 85°C, full bridge
t = 10ms
No voltage
non-repetitive on-state
375
t = 8.3ms
reapplied
or forward current
300
t = 10ms
100% V
RRM
reapplied
315
t = 8.3ms
Sinusoidal half wave,
I
2
t
Maximum I
2
t for fusing
637
t = 10ms
No voltage
Initial T
J
= T
J
max.
580
t = 8.3ms
reapplied
450
t = 10ms
100% V
RRM
reapplied
410
t = 8.3ms
I
2
√
t
Maximum I
2
√
t for fusing
6365
A
2
√
s
t = 0.1 to 10ms, no voltage reapplied
I
2
t for time tx = I
2
√
t
.
√
tx
V
T(TO)
Max. value of threshold voltage
0.82
V
T
J
= 125°C
r
t1
Max. level value of on-state
slope resistance
V
TM
V
FM
Max. peak on-state or
forward voltage drop
di/dt
Maximum non repetitive rate of
rise of turned on current
T
J
= 125°C from 0.67 V
DRM
I
TM
=
π
x I
T(AV)
, I
g
= 500mA, tr < 0.5μs, tp > 6μs
I
H
Maximum holding current
130
mA
T
J
= 25°C anode supply = 6V, resistive load, gate open
I
L
Maximum latching current
250
mA
T
J
= 25°C anode supply = 6V, resistive load
Parameter
P100
Units Conditions
On-state Conduction
A
A
2
s
12
m
T
J
= 125°C, Av. power = V
T(TO)
* I
T(AV)
+ r
t
+ (I
T(RMS)
)
2
1.35
V
T
J
= 25°C, I
TM
=
π
x I
T(AV)
200
A/μs
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