參數(shù)資料
型號： P1100ECRP1
英文描述： FLASH-Based 8-Bit CMOS Microcontroller, -40C to +125C, 18-PDIP, TUBE
中文描述： SIDAC的| 130V五（公報(bào)）最大| 800mA的我（縣）|對92VAR
文件頁數(shù)： 16/161頁
文件大小： 986K
代理商： P1100ECRP1
Electrical Parameters Defined
SIDACtor
Data Book
1 - 6
Teccor Electronics
(972) 580-7777
C
O
- Off-state Capacitance
Typical capacitance measured in off-state.
dI/dt - Rate of Rise of Current
Maximum rated value of the acceptable rate of rise in current over time.
dV/dt - Rate of Rise of Voltage
Rate of applied voltage over time.
I
S
- Switching Current
Maximum current required to switch to on-state.
I
DRM
- Leakage Current
Maximum peak off-state current measured at V
DRM.
I
H
- Holding Current
Minimum current required to maintain on-state.
I
PP
- Peak Pulse Current
Maximum rated peak impulse current.
I
T
- On-state Current
Maximum rated continuous on-state current.
I
TSM
- Peak One Cycle Surge Current
Maximum rated one cycle AC current.
V
S
- Switching Voltage
Maximum voltage prior to switching to on-state.
V
DRM
- Peak off-state Voltage
Maximum voltage that can be applied while maintaining off-state.
V
F
- On-state Forward Voltage
Maximum forward voltage measured at rated on-state current.
V
T
- On-state Voltage
Maximum voltage measured at rated on-state current.
NOTE:
On-state is defined as the low impedance condition reached during full
conduction. It is also referred to as the crowbar condition and simulates a short
circuit.
Off-state is defined as the high impedance condition prior to beginning
conduction. It is also referred to as the blocking condition and simulates an
open circuit.
相關(guān)PDF資料
PDF描述
P1100ECRP2 FLASH-Based 8-Bit CMOS Microcontroller, -40C to +125C, 20-SSOP 208mil, TUBE
P1100SARP SIDAC|130V V(BO) MAX|800MA I(S)|DO-214AA
P1100SBRP SIDAC|130V V(BO) MAX|800MA I(S)|DO-214AA
P1100SCRP Flash Microcontroller with Comparator, CCP, & USART., -40C to +85C, 18-SOIC 300mil, T/R
P1101SARP SIDAC|130V V(BO) MAX|800MA I(S)|DO-214AA
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
P1100ECRP2 功能描述:硅對稱二端開關(guān)元件 500A 90V RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA
P1100G_LRP 制造商:LITTELFUSE 制造商全稱:Littelfuse 功能描述:Teccor㈢ brand Protection Thyristors
P1100GALRP 功能描述:硅對稱二端開關(guān)元件 90V 50A DO15 SIDACtor Bi RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA
P1100GBLRP 功能描述:硅對稱二端開關(guān)元件 90V 80A DO15 SIDACtor Bi RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA
P1100HC 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Peripheral IC
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