參數(shù)資料
型號(hào)： P1100ECRP1
英文描述： FLASH-Based 8-Bit CMOS Microcontroller, -40C to +125C, 18-PDIP, TUBE
中文描述： SIDAC的| 130V五（公報(bào)）最大| 800mA的我（縣）|對(duì)92VAR
文件頁數(shù)： 123/161頁
文件大小： 986K
代理商： P1100ECRP1
SIDACtor
Data Book
Fuse Selection Criteria
Teccor Electronics
(972) 580-7777
5 - 7
T
8$
Because fuses are rated in terms of continuous voltage and current carrying capacity,
it is often difficult to translate this information in terms of peak pulse current ratings. In
an attempt to simplify this process, Teccor has worked with several fuse manufacturers
to compile Table 5-1.
Table 5-1:
Notes:
1. The I
PP
ratings apply to a 2AG slow blow fuse only.
2. Because there is a high degree of variance in the fusing characteristics, the I
PP
ratings listed should only be
used as approximations.
When selecting a fuse the following criteria should be used:
Peak Pulse Current (I
PP
)
For circuits that do not require additional series resistance, the surge current rating
(I
PP
) of the fuse should be greater than or equal to the surge currents associated with
the lightning immunity tests of the applicable regulatory requirement (I
PK
).
I
PP
≥
I
PK
For circuits that utilize additional series resistance, the surge current rating (I
PP
) of the
fuse should be greater than or equal to the
available
surge currents associated with
the lightning immunity tests of the applicable regulatory requirement (I
PK(available)
).
I
PP
≥
I
PK(available)
The maximum available surge current is calculated by dividing the peak surge voltage
(V
PK
) by the total circuit resistance (R
TOTAL
).
I
PK(available)
= V
PK
/R
TOTAL
For longitudinal surges (TIP-GND, RING-GND), R
TOTAL
is calculated for both Tip and Ring.
R
SOURCE
= V
PK
/I
PK
R
TOTAL
= R
TIP
+ R
SOURCE
R
TOTAL
= R
RING
+ R
SOURCE
For metallic surges (TIP-RING):
R
SOURCE
= V
PK
/I
PK
R
TOTAL
= R
TIP
+ R
RING
+ R
SOURCE
Equivalent I
PP
Rating
10X560μs
(A)
15
25
30
35
45
65
85
115
Fuse Rating
(mA)
250
350
400
500
600
750
1000
1250
10X160μs
(A)
30
45
50
65
75
90
130
160
10X1000μs
(A)
10
20
25
30
35
50
65
100
相關(guān)PDF資料
PDF描述
P1100ECRP2 FLASH-Based 8-Bit CMOS Microcontroller, -40C to +125C, 20-SSOP 208mil, TUBE
P1100SARP SIDAC|130V V(BO) MAX|800MA I(S)|DO-214AA
P1100SBRP SIDAC|130V V(BO) MAX|800MA I(S)|DO-214AA
P1100SCRP Flash Microcontroller with Comparator, CCP, & USART., -40C to +85C, 18-SOIC 300mil, T/R
P1101SARP SIDAC|130V V(BO) MAX|800MA I(S)|DO-214AA
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
P1100ECRP2 功能描述:硅對(duì)稱二端開關(guān)元件 500A 90V RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA
P1100G_LRP 制造商:LITTELFUSE 制造商全稱:Littelfuse 功能描述:Teccor㈢ brand Protection Thyristors
P1100GALRP 功能描述:硅對(duì)稱二端開關(guān)元件 90V 50A DO15 SIDACtor Bi RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA
P1100GBLRP 功能描述:硅對(duì)稱二端開關(guān)元件 90V 80A DO15 SIDACtor Bi RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA
P1100HC 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Peripheral IC
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