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參數(shù)資料
| 型號： | OPB100-EZ |
| 廠商： | OPTEK TECHNOLOGY INC |
| 元件分類： | 光發(fā)射 |
| 英文描述： | Optical Emitter and Sensor Pair |
| 中文描述： | FIBER OPTIC LED EMITTER |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 486K |
| 代理商： | OPB100-EZ |
OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.
Optical Emitter and Sensor Pair
OPB100Z, OPB100EZ, OPB100SZ
OPTEK Technology Inc. —
1645 Wallace Drive, Carrollton, Texas 75006
FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com
Phone: (972) 323-2200 or (800) 341-4747
Issue A .1 01/06
Page 2 of 3
Electrical Characteristics
(T
A
= 25
°
C unless otherwise noted — for reference only)
SYMBOL
PARAMETER
MIN
TYP
MAX
UNITS
TEST CONDITIONS
Input Diode
(See OP298 for additional information — for reference only)
V
F
Forward Voltage
-
-
1.7
V
I
F
= 20 mA
I
R
Reverse Current
-
-
15
μA
V
R
= 10 V
q
HP
Emission Angle at Half Power Points
-
25
-
Degree I
F
= 20 mA
E
E
(APT)
Aperture Radiant Incidence
2.4
-
-
mW/cm
2
I
F
= 100 mA
Distance = 1.43” (3.63 cm)
Aperture = 0.25” (6.35 mm)
Output Phototransistor
(See OP598 for additional information — for reference only)
V
(BR)CEO
Collector-Emitter Breakdown Voltage
30
-
-
V
I
C
= 1 mA, E
E
= 0mw/cm
2
(no light)
I
C
= 100 μA, E
E
= 0mw/cm
2
(no light)
V
CE
= 10V, I
F
= 0, E
E
= 0 mw/cm
2
(no light)
V
(BR)ECO
Emitter-Collector Breakdown Voltage
5
-
-
V
I
CEO
Collector Dark Current
-
-
100
nA
V
CE(SAT)
Collector-Emitter Saturation Voltage
-
-
0.4
V
I
C
= 400 μA, E
E
= 1.7 mw/cm
2
V
CE
= 5 V, E
E
= 1.7 mw/cm
2
I
C(ON)
On-State Collector Current
5
-
-
mA
Notes:
1.
2.
3.
Derate linearly 3.33mW/
°
C above 25
°
C.
All parameters measured using pulse technique.
Derate linearly 1.43mW/°C above 25°C.
Absolute Maximum Ratings
(T
A
=25°C unless otherwise noted)
Storage Temperature Range
-40
o
C to +85
o
C
Operating Temperature Range
(1)
-40
o
C to +80
o
C
Input LED (OP298 for additional information)
Forward DC Current
100 mA
Peak Forward Current (1 μs pulse width, 300 pps)
1 A
Reverse DC Voltage
2 V
Power Dissipation
(2)
142 mW
Collector-Emitter Voltage
30 V
Emitter-Collector Voltage
5 V
Output Phototransistor (OP598 for additional information)
Collector DC Current
50 mA
Power Dissipation
(3)
250 mW
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| OPB100EZ | 制造商:TT Electronics / OPTEK Technology 功能描述:OPTICAL SENSOR (PHOTODETECTOR - "NPN") P |
| OPB100SZ | 制造商:TT Electronics / OPTEK Technology 功能描述:NPN PHOTOTRANSISTOR880NMSNAP-IN PANEL 制造商:TT Electronics / OPTEK Technology 功能描述:NPN PHOTOTRANSISTOR,880NM,SNAP-IN PANEL; Transistor Polarity:NPN; Wavelength Typ:880nm; Power Consumption:250mW; No. of Pins:2; Leaded Process Compatible:Yes; Operating Temperature Max:80C; Operating Temperature Min:-40C ;RoHS Compliant: Yes |
| OPB100-SZ | 功能描述:光電晶體管 Infrared 890nm Sensor RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1 |
| OPB100Z | 功能描述:光學開關（透射型，光電晶體管輸出） Emitter Sensor 890nm RoHS:否 制造商:Omron Electronics 輸出設備:Phototransistor 槽寬:3.4 mm 光圈寬度:0.5 mm 集電極—發(fā)射極最大電壓 VCEO:30 V 最大集電極電流:20 mA 正向電流: 安裝風格:Through Hole 最大工作溫度:+ 85 C 最小工作溫度:- 25 C 封裝: |
| OPB10100-SERIES | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Optoelectronic |
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