SBOS342B – DECEMBER 2008 – REVISED AUGUST 2009 ........................................................" />
參數(shù)資料
型號: OPA659IDRBR
廠商: Texas Instruments
文件頁數(shù): 15/32頁
文件大?。?/td> 0K
描述: IC OPAMP WBND VFB JFET IN 8-SON
標準包裝: 3,000
放大器類型: J-FET
電路數(shù): 1
轉(zhuǎn)換速率: 2550 V/µs
增益帶寬積: 350MHz
-3db帶寬: 650MHz
電流 - 輸入偏壓: 10pA
電壓 - 輸入偏移: 1000µV
電流 - 電源: 32mA
電流 - 輸出 / 通道: 70mA
電壓 - 電源,單路/雙路(±): ±3.5 V ~ 6.5 V
工作溫度: -40°C ~ 85°C
安裝類型: 表面貼裝
封裝/外殼: 8-VDFN 裸露焊盤
供應商設備封裝: 8-SON 裸露焊盤(3x3)
包裝: 帶卷 (TR)
SBOS342B – DECEMBER 2008 – REVISED AUGUST 2009 ............................................................................................................................................ www.ti.com
Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision A (March, 2009) to Revision B ................................................................................................. Page
Removed footnote and table markings regarding SOT23-5 package availabilty................................................................... 2
Removed lead temperature specification from Absolute Maximum Ratings table ................................................................ 2
Added DRB package to test condition for Input Offset Voltage parameter, T
Added performance specifications for Input Offset Voltage parameter, DBV package......................................................... 3
Added performance specifications for Average Offset Voltage Drift parameter, DBV package............................................ 3
Added footnote (2) to Electrical Characteristics (V
Changes from Original (December, 2008) to Revision A ............................................................................................... Page
Changed ordering information for SOT23-5 (DBV) package and added footnote; availability expected 2Q 2009 ............... 2
22
Copyright 2008–2009, Texas Instruments Incorporated
Product Folder Link(s): OPA659
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