
REV. B
–2–
OP295/OP495–SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
Parameter
Symbol
Conditions
Min
T yp
Max
Units
INPUT CHARACT ERIST ICS
Offset Voltage
V
OS
30
300
800
20
30
±
3
±
5
+4.0
μ
V
μ
V
nA
nA
nA
nA
V
dB
V/mV
V/mV
μ
V/
°
C
–40
°
C
≤
T
A
≤
+125
°
C
Input Bias Current
I
B
8
–40
°
C
≤
T
A
≤
+125
°
C
Input Offset Current
I
OS
±
1
–40
°
C
≤
T
A
≤
+125
°
C
Input Voltage Range
Common-Mode Rejection Ratio
Large Signal Voltage Gain
V
CMRR
A
VO
0
90
1000
500
0 V
≤
V
CM
≤
4.0 V, –40
°
C
≤
T
≤
+125
°
C
R
L
= 10 k
, 0.005
≤
V
OUT
≤
4.0 V
R
L
= 10 k
, –40
°
C
≤
T
A
≤
+125
°
C
110
10,000
Offset Voltage Drift
OUT PUT CHARACT ERIST ICS
Output Voltage Swing High
V
OS
/
T
1
5
V
OH
R
L
= 100 k
to GND
R
L
= 10 k
to GND
I
OUT
= 1 mA, –40
°
C
≤
T
A
≤
+125
°
C
R
L
= 100 k
to GND
R
L
= 10 k
to GND
I
OUT
= 1 mA, –40
°
C
≤
T
A
≤
+125
°
C
4.98
4.90
5.0
4.94
4.7
0.7
0.7
90
±
18
V
V
V
mV
mV
mV
mA
Output Voltage Swing Low
V
OL
2
2
Output Current
POWER SUPPLY
Power Supply Rejection Ratio
I
OUT
±
11
PSRR
±
1.5 V
≤
V
S
≤
±
15 V
±
1.5 V
≤
V
S
≤
±
15 V,
–40
°
C
≤
T
≤
+125
°
C
V
OUT
= 2.5 V, R
L
=
∞
, –40
°
C
≤
T
A
≤
+125
°
C
90
110
dB
85
dB
μ
A
Supply Current Per Amplifier
DYNAMIC PERFORMANCE
Skew Rate
Gain Bandwidth Product
Phase Margin
NOISE PERFORMANCE
Voltage Noise
Voltage Noise Density
Current Noise Density
Specifications subject to change without notice.
ELECTRICAL CHARACTERISTICS
I
SY
150
SR
GBP
θ
O
R
L
= 10 k
0.03
75
86
V/
μ
s
kHz
Degrees
e
n
p-p
e
n
i
n
0.1 Hz to 10 Hz
f = 1 kHz
f = 1 kHz
1.5
51
<0.1
μ
V p-p
nV/
√
Hz
pA/
√
Hz
Parameter
Symbol
Conditions
Min
T yp
Max
Units
INPUT CHARACT ERIST ICS
Offset Voltage
Input Bias Current
Input Offset Current
Input Voltage Range
Common-Mode Rejection Ratio
Large Voltage Gain
Offset Voltage Drift
OUT PUT CHARACT ERIST ICS
Output Voltage Swing High
Output Voltage Swing Low
POWER SUPPLY
Power Supply Rejection Ratio
V
OS
I
B
I
OS
V
CMRR
A
VO
V
OS
/
T
30
8
±
1
500
20
±
3
+2.0
μ
V
nA
nA
V
dB
V/mV
μ
V/
°
C
0
90
0 V
≤
V
CM
≤
2.0 V, –40
°
C
≤
T
A
≤
+125
°
C
R
L
= 10 k
110
750
1
V
OH
V
OL
R
L
= 10 k
to GND
R
L
= 10 k
to GND
2.9
V
mV
0.7
2
PSRR
±
1.5 V
≤
V
S
≤
±
15 V
±
1.5 V
≤
V
S
≤
±
15 V,
–40
°
C
≤
T
≤
+125
°
C
V
OUT
= 1.5 V, R
L
=
∞
, –40
°
C
≤
T
A
≤
+125
°
C
90
110
dB
85
dB
μ
A
Supply Current Per Amplifier
DYNAMIC PERFORMANCE
Slew Rate
Gain Bandwidth Product
Phase Margin
I
SY
150
SR
GBP
θ
O
R
L
= 10 k
0.03
75
85
V/
μ
s
kHz
Degrees
NOISE PERFORMANCE
Voltage Noise
Voltage Noise Density
Current Noise Density
e
n
p-p
e
n
i
n
0.1 Hz to 10 Hz
f = 1 kHz
f = 1 kHz
1.6
53
<0.1
μ
V p-p
nV/
√
Hz
pA/
√
Hz
Specifications subject to change without notice.
(@ V
S
= +5.0 V, V
CM
= +2.5 V, T
A
= +25
8
C unless otherwse noted)
(@ V
S
= +3.0 V, V
CM
= +1.5 V, T
A
= +25
8
C unless otherwse noted)