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參數(shù)資料
| 型號(hào)： | OMY440 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | POWER MOSFETS IN HERMETIC ISOLATED TO-257AA PACKAGE |
| 中文描述： | 功率MOSFET，朗格獨(dú)立于- 257AA封裝 |
| 文件頁(yè)數(shù)： | 3/4頁(yè) |
| 文件大?。?/td> | 39K |
| 代理商： | OMY440 |
3
O
3
ELECTRICAL CHARACTERISTICS:
T
C
= 25° unless otherwise noted
STATIC P/N OMY340
Parameter
Min. Typ. Max. Units Test Conditions
BV
DSS
Drain-Source Breakdown
400
Voltage
V
GS(th)
Gate-Threshold Voltage
2.0
I
GSSF
Gate-Body Leakage Forward
I
GSSR
Gate-Body Leakage Reverse
I
DSS
Zero Gate Voltage Drain
Current
ELECTRICAL CHARACTERISTICS:
T
C
= 25° unless otherwise noted
STATIC P/N OMY440
Parameter
Min. Typ. Max. Units Test Conditions
BV
DSS
Drain-Source Breakdown
500
Voltage
V
GS(th)
Gate-Threshold Voltage
2.0
I
GSSF
Gate-Body Leakage Forward
I
GSSR
Gate-Body Leakage Reverse
I
DSS
Zero Gate Voltage Drain
Current
V
V
GS
= 0,
I
D
= 250
m
A
V
DS
= V
GS
, I
D
= 250
m
A
V
GS
= 20 V
V
GS
= - 20 V
V
DS
= Max. Rat., V
GS
= 0
V
DS
= 0.8 Max. Rat., V
GS
= 0,
T
C
= 125° C
V
DS
2 V
DS(on)
, V
GS
= 10 V
V
GS
= 10 V, I
D
= 5 A
V
V
GS
= 0,
I
D
= 250
m
A
V
DS
= V
GS,
I
D
= 250
m
A
V
GS
= 20 V
V
GS
= - 20 V
V
DS
= Max. Rat., V
GS
= 0
V
DS
= 0.8 Max. Rat., V
GS
= 0,
T
C
= 125° C
V
DS
2 V
DS(on)
, V
GS
= 10 V
V
GS
= 10 V, I
D
= 4 A
4.0
100
-100
0.25
1.0
V
nA
nA
mA
mA
4.0
100
- 100
0.25
1.0
V
nA
nA
mA
mA
0.1
0.2
0.1
0.2
I
D(on)
V
DS(on)
On-State Drain Current
1
Static Drain-Source On-State
Voltage
1
Static Drain-Source On-State
Resistance
1
Static Drain-Source On-State
Resistance
1
10
A
V
I
D(on)
V
DS(on)
On-State Drain Current
1
Static Drain-Source On-State
Voltage
1
Static Drain-Source On-State
Resistance
1
Static Drain-Source On-State
Resistance
1
4.5
A
V
2.5
2.9
3.2
3.52
R
DS(on)
0.58
V
GS
= 10 V, I
D
= 5 A
R
DS(on)
0.88
V
GS
= 10 V, I
D
= 4 A
R
DS(on)
1.16
V
GS
= 10 V, I
D
= 5 A,
T
C
= 125 C
R
DS(on)
1.76
V
GS
= 10 V, I
D
= 4 A,
T
C
= 125 C
DYNAMIC
g
fs
C
iss
C
oss
C
rss
T
d(on)
t
r
T
d(off)
t
f
DYNAMIC
g
fs
C
iss
C
oss
C
rss
T
d(on)
t
r
T
d(off)
t
f
Forward Transductance
1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
4.0
4.4
1150
165
70
17
12
45
30
S
(
W
)
pF
pF
pF
ns
ns
ns
ns
V
DS
2 V
DS(on)
, I
D
= 5 A
V
GS
= 0
V
DS
= 25 V
f = 1 MHz
V
DD
= 175 V, I
D
=
5 A
R
g
= 5
W
, V
DS
=10V
Forward Transductance
1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
4.0
4.8
1225
200
85
17
5
42
14
S
(
W
)
pF
pF
pF
ns
ns
ns
ns
V
DS
2 V
DS(on)
, I
D
= 4 A
V
GS
= 0
V
DS
= 25 V
f = 1 MHz
V
DD
= 200 V, I
D
=
4 A
R
g
= 5
W
, V
DS
=10 V
(MOSFET) switching times are
essentially independent of
operating temperature.
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
I
S
Continuous Source Current
(Body Diode)
I
SM
Source Current
1
(Body Diode)
V
SD
Diode Forward Voltage
1
t
rr
Reverse Recovery Time
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
I
S
Continuous Source Current
(Body Diode)
I
SM
Source Current
1
(Body Diode)
V
SD
Diode Forward Voltage
1
t
rr
Reverse Recovery Time
- 10
A
Modified MOSPOWER
- 8
A
Modified MOSPOWER
symbol showing
symbol showing
- 40
A
the integral P-N
- 32
A
the integral P-N
Junction rectifier.
T
C
= 25 C, I
S
= -10 A, V
GS
= 0
T
J
= 150 C,I
F
= I
S
,
dl
F
/ds = 100 A/
m
s
Junction rectifier.
T
C
= 25 C, I
S
= -18 A, V
GS
= 0
T
J
= 150 C,I
F
= I
S
,
dl
F
/ds = 100 A/
m
s
- 2
V
ns
- 2
V
ns
530
700
1 Pulse Test:
Pulse Width 300
m
sec, Duty Cycle
2%.
1 Pulse Test:
Pulse Width 300
m
sec, Duty Cycle
2%.
G
D
S
G
D
S
(
W
)
(
W
)
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