- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄383683 > OMY440 (Electronic Theatre Controls, Inc.) POWER MOSFETS IN HERMETIC ISOLATED TO-257AA PACKAGE PDF資料下載
參數(shù)資料
| 型號(hào)： | OMY440 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | POWER MOSFETS IN HERMETIC ISOLATED TO-257AA PACKAGE |
| 中文描述： | 功率MOSFET，朗格獨(dú)立于- 257AA封裝 |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 39K |
| 代理商： | OMY440 |
3
O
3
ELECTRICAL CHARACTERISTICS:
T
C
= 25° unless otherwise noted
STATIC P/N OMY140
Parameter
Min. Typ. Max. Units Test Conditions
BV
DSS
Drain-Source Breakdown
100
Voltage
V
GS(th)
Gate-Threshold Voltage
2.0
I
GSSF
Gate-Body Leakage Forward
I
GSSR
Gate-Body Leakage Reverse
I
DSS
Zero Gate Voltage Drain
Current
ELECTRICAL CHARACTERISTICS:
T
C
= 25° unless otherwise noted
STATIC P/N OMY240
Parameter
Min. Typ. Max. Units Test Conditions
BV
DSS
Drain-Source Breakdown
200
Voltage
V
GS(th)
Gate-Threshold Voltage
2.0
I
GSSF
Gate-Body Leakage Forward
I
GSSR
Gate-Body Leakage Reverse
I
DSS
Zero Gate Voltage Drain
Current
V
V
GS
= 0,
I
D
= 250
m
A
V
DS
= V
GS
, I
D
= 250
m
A
V
GS
= 20 V
V
GS
= - 20 V
V
DS
= Max. Rat., V
GS
= 0
V
DS
= 0.8 Max. Rat., V
GS
= 0,
T
C
= 125° C
V
DS
2 V
DS(on)
, V
GS
= 10 V
V
GS
= 10 V, I
D
= 15 A
V
V
GS
= 0,
I
D
= 250
m
A
V
DS
= V
GS,
I
D
= 250
m
A
V
GS
= 20 V
V
GS
= - 20 V
V
DS
= Max. Rat., V
GS
= 0
V
DS
= 0.8 Max. Rat., V
GS
= 0,
T
C
= 125° C
V
DS
2 V
DS(on)
, V
GS
= 10 V
V
GS
= 10 V, I
D
= 10 A
4.0
100
-100
0.25
1.0
V
nA
nA
mA
mA
4.0
100
- 100
0.25
1.0
V
nA
nA
mA
mA
0.1
0.2
0.1
0.2
I
D(on)
V
DS(on)
On-State Drain Current
1
Static Drain-Source On-State
Voltage
1
Static Drain-Source On-State
Resistance
1
Static Drain-Source On-State
Resistance
1
14
A
V
I
D(on)
V
DS(on)
On-State Drain Current
1
Static Drain-Source On-State
Voltage
1
Static Drain-Source On-State
Resistance
1
Static Drain-Source On-State
Resistance
1
14
A
V
1.40 1.73
1.8
2.1
R
DS(on)
.115
V
GS
= 10 V, I
D
= 15 A
R
DS(on)
0.21
V
GS
= 10 V, I
D
= 10 A
R
DS(on)
.20
V
GS
= 10 V, I
D
= 15 A,
T
C
= 125 C
R
DS(on)
0.40
V
GS
= 10 V, I
D
= 10 A,
T
C
= 125 C
DYNAMIC
g
fs
C
iss
C
oss
C
rss
T
d(on)
t
r
T
d(off)
t
f
DYNAMIC
g
fs
C
iss
C
oss
C
rss
T
d(on)
t
r
T
d(off)
t
f
Forward Transductance
1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
10
S
(
W
)
pF
pF
pF
ns
ns
ns
ns
V
DS
2 V
DS(on)
, I
D
= 15 A
V
GS
= 0
V
DS
= 25 V
f = 1 MHz
V
DD
= 30 V, I
D
@
5 A
R
g
= 5
W
, V
GS
=10 V
(MOSFET) switching times are
essentially independent of
operating temperature.
Forward Transductance
1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
6.0
S
(
W
)
pF
pF
pF
ns
ns
ns
ns
V
DS
2 V
DS(on)
, I
D
= 10 A
V
GS
= 0
V
DS
= 25 V
f = 1 MHz
V
DD
=75 V, I
D
@
18 A
R
g
=5
W
, V
GS
= 10 V
(MOSFET) switching times are
essentially independent of
operating temperature.
1275
550
160
16
19
42
24
1000
250
100
17
52
36
30
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
I
S
Continuous Source Current
(Body Diode)
I
SM
Source Current
1
(Body Diode)
V
SD
Diode Forward Voltage
1
t
rr
Reverse Recovery Time
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
I
S
Continuous Source Current
(Body Diode)
I
SM
Source Current
1
(Body Diode)
V
SD
Diode Forward Voltage
1
t
rr
Reverse Recovery Time
- 27
A
Modified MOSPOWER
- 18
A
Modified MOSPOWER
symbol showing
symbol showing
- 108
A
the integral P-N
- 72
A
the integral P-N
Junction rectifier.
T
C
= 25 C, I
S
= -24 A, V
GS
= 0
T
J
= 150 C,I
F
= I
S
,
dl
F
/ds = 100 A/
m
s
Junction rectifier.
T
C
= 25 C, I
S
= -18 A, V
GS
= 0
T
J
= 150 C,I
F
= I
S
,
dl
F
/ds = 100 A/
m
s
- 2.0
V
ns
-1.5
V
ns
200
350
1 Pulse Test:
Pulse Width 300
m
sec, Duty Cycle
2%.
1 Pulse Test:
Pulse Width 300
m
sec, Duty Cycle
2%.
G
D
S
G
D
S
(
W
)
(
W
)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| OMY240 | POWER MOSFETS IN HERMETIC ISOLATED TO-257AA PACKAGE |
| OMY340 | POWER MOSFETS IN HERMETIC ISOLATED TO-257AA PACKAGE |
| ON1531HA-(A) | |
| ON1531HA-(M) | |
| ON1531HC-(A) | |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| OMY440SR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:500V Single N-Channel Hi-Rel MOSFET in a D2 package |
| OMZ125 | 制造商:SCHURTER 制造商全稱:Schurter Inc. 功能描述:Surface Mount Fuse with Holder, 12 x 5.2 mm, Time-Lag T, 125 VAC, 125 VDC |
| ON030 | 制造商:Brady Corporation 功能描述: |
| ON1002 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
| ON1003 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Photo Interrupter |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。