參數(shù)資料
型號: OM75N05SC
英文描述: 50V, P-Channel, Power MOSFET(50V,P溝道功率MOS場效應(yīng)管)
中文描述: 50V的P溝道,功率MOSFET(50V的P溝道功率馬鞍山場效應(yīng)管)
文件頁數(shù): 7/8頁
文件大小: 74K
代理商: OM75N05SC
OM75N06SC, OM75N06SA, OM75N05SC, OM75N05SA
3.1 - 53
OM55N10SA - OM75N06SC
3.1
g
fs
(S)
50
40
30
20
10
0
0
20
40
60
80
100
I
D
(A)
T
J
= 40°C
T
J
= 25°C
T
J
= 125°C
V
DS
> I
D(on)
x R
DS(on)max
R
DS(on)
0.030
0
20
40
60
80
I
D
(A)
V
GS
= 10V
0.025
0.020
0.015
0.010
V
GS
(V)
10
0
20
40
60
80
Q
g
(nC)
V
DS
= 80V
8
6
4
2
0
100
I
D
= 30A
C(nF)
5
0
20
40
60
80
V
DS
(V
V
DS
= 0
f = 1MHz
4
3
2
1
0
100
C
res
C
oes
C
ies
V
(norm)
-50
V
DS
= V
GS
I
D
= 250μA
1.2
1.0
0.8
0.6
0
50
100
T
J
(°C)
R
(norm)
-50
V
DS
= 10V
I
D
= 30A
1.5
1.0
0.5
0
0
50
100
T
J
(°C)
Transconductance
Static Drain-Source On Resistance
Capacitance Variations
Normalized On Resistance
vs Temperature
Gate Charge vs Gate-Source Voltage
Normalized Gate Threshold
Voltage vs Temperature
相關(guān)PDF資料
PDF描述
OM75N06SA 60V, P-Channel, Power MOSFET(60V,P溝道功率MOS場效應(yīng)管)
OM75N06SC 60V, P-Channel, Power MOSFET(60V,P溝道功率MOS場效應(yīng)管)
OM60N10SC 100V, P-Channel, Power MOSFET(100V,P溝道功率MOS場效應(yīng)管)
OM55N10SC 100V, P-Channel, Power MOSFET(100V,P溝道功率MOS場效應(yīng)管)
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