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參數(shù)資料
| 型號： | OM55N10SC |
| 英文描述： | 100V, P-Channel, Power MOSFET(100V,P溝道功率MOS場效應(yīng)管) |
| 中文描述： | 100V的，P溝道，功率MOSFET（100V的，P溝道功率馬鞍山場效應(yīng)管） |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 74K |
| 代理商： | OM55N10SC |
3.1
50V, 60V, And 100V Ultra Low R
DS(on)
Power MOSFETs In TO-254 And TO-258
Isolated Packages
LOW VOLTAGE, LOW R
DS(on)
POWER MOSFETS
IN HERMETIC ISOLATED PACKAGE
FEATURES
Isolated Hermetic Metal Packages
Ultra Low R
DS(on)
Low Conductive Loss/Low Gate Charge
Available Screened To MIL-S-19500, TX, TXV And S Levels
Ceramic Feedthroughs available
DESCRIPTION
This series of hermetic packaged MOSFETs are ideally suited for low voltage
applications; battery powered voltage power supplies, motor controls, dc to dc
converters and synchronous rectification. The low conduction loss allows smaller
heat sinking and the low gate change simpler drive circuitry.
MAXIMUM RATINGS
(Per Device)
OM75N06SC
OM75N05SC
OM75N06SA
OM60N10SC
OM75N05SA
OM55N10SC
OM55N10SA
PART NO.
OM60N10SC
OM55N10SC
OM55N10SA
OM75N06SC
OM75N06SA
OM75N05SC
OM75N05SA
V
DS
(V)
100
100
100
60
60
50
50
R
DS(on)
( )
.025
.030
.035
.016
.018
.016
.018
I
D
(A)
60
55
55
75
75
75
75
Package
TO-258AA
TO-258AA
TO-254AA
TO-258AA
TO-254AA
TO-258AA
TO-254AA
SCHEMATIC
4 11 R1
Supersedes 2 07 R0
PIN CONNECTION
TO-254AA
Pin 1:
Pin 2:
Pin 3:
Drain
Source
Gate
Pin 1:
Pin 2:
Pin 3:
Drain
Source
Gate
Drain
Source
Gate
1
2
3
1
2
3
TO-258AA
3.1 - 47
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