參數(shù)資料
型號： OM55N10SA
廠商： Electronic Theatre Controls, Inc.
英文描述： LOW VOLTAGE, LOW RDS(on) POWER MOSFETS IN HERMETIC ISOLATED PACKAGE
中文描述： 低電壓，低的RDS（on）在朗格隔離封裝功率MOSFET
文件頁數(shù)： 4/8頁
文件大?。?/td> 75K
代理商： OM55N10SA
3
O
3
OM55N10SA
(T
C
= 25°C unless otherwise specified)
Avalanche Characteristics
I
AR
Avalanche Current
Min.
Typ. Max. Units Test Conditions
55
A
(repetitive or
non-repetitive,T
J
= 25°C)
(starting T
J
= 25°C,
I
D
= I
AR
, V
DD
= 25 V)
(pulse width limited
by T
j max
,
d
< 1%)
(repetitive or
non-repetitive, T
J
= 100°C)
E
AS
Single Pulse Avalanche Energy
600
mJ
E
AR
Repetitive Avalanche Energy
100
mJ
I
AR
Avalanche Current
37
A
Electrical Characteristics - OFF
V
(BR)DSS
Drain-Source
Breakdown Voltage
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
I
GSS
Gate-Body Leakage
Current (V
DS
= 0)
Electrical Characteristics - ON
V
GS(th)
Gate Threshold Voltage
R
DS(on)
Static Drain-Source On
Resistance
I
D(on)
On State Drain Current
Electrical Characteristics - Dynamic
g
fs
Forward Transconductance
C
ies
Input Capacitance
C
oes
Output Capacitance
C
res
Reverse Transfer Capacitance
Electrical Characteristics - Switching On
T
d(on)
Turn-On Time
t
r
Rise Time
(di/dt)
on
Turn-On Current Slope
100
V
I
D
= 250 μA, V
GS
= 0
250
1000
±100
μA
μA
nA
V
DS
= Max. Rat.
V
DS
= Max. Rat. x 0.8, T
C
= 125°C
V
GS
= ±20 V
2
4
V
V
DS
= V
GS
, I
D
= 250 μA
V
GS
= 10 V, I
D
= 30 A
T
C
= 100°C
V
DS
> I
D(on)
x R
DS(on)max
, V
GS
= 10 V
0.035
0.070
55
A
25
S
pF
pF
pF
V
DS
> I
D(on)
x R
DS(on)max
, I
D
= 30 A
V
DS
= 25 V
V
GS
= 0
f = 1 mHz
4000
1100
250
90
270
270
nS
nS
A/μS
V
DD
= 80 V, I
D
= 30 A
R
G
= 50 , V
GS
= 10 V
V
DD
= 80 V, I
D
= 30 A
R
G
= 50 , V
GS
= 10 V
V
DD
= 80 V, I
D
= 30 A, V
GS
= 10 V
Q
g
Total Gate Charge
120
nC
Electrical Characteristics - Switching Off
T
r(Voff)
Off Voltage Rise Time
t
f
Fall Time
t
cross
Cross-Over Time
Electrical Characteristics - Source Drain Diode
I
SD
Source Drain Current
I
SDM
*
Source Drain Current (pulsed)
V
SD
Forward On Voltage
t
rr
Reverse Recovery Time
200
210
410
nS
nS
nS
V
DD
= 80 V, I
D
= 30 A
R
G
= 50 , V
GS
= 10 V
55
180
1.5
A
A
V
nS
I
SD
= 55 A, V
GS
= 0
I
SD
= 55 A, di/dt = 100 A/μs
V
R
= 80 V
180
Q
rr
I
RRM
*Pulsed: Pulse Duration 300μS, Duty Cycle 1.5%.
Reverse Recovery Charge
Reverse Recovery Current
1.8
11
μC
A
OM75N06SC
(T
C
= 25°C unless otherwise specified)
Avalanche Characteristics
I
AR
Avalanche Current
Min.
Typ. Max. Units Test Conditions
70
A
(repetitive or
non-repetitive,T
J
= 25°C)
(starting T
J
= 25°C,
I
D
= I
AR
, V
DD
= 25 V)
(pulse width limited
by T
j max
,
d
< 1%)
(repetitive or
non-repetitive, T
J
= 100°C)
E
AS
Single Pulse Avalanche Energy
900
mJ
E
AR
Repetitive Avalanche Energy
200
mJ
I
AR
Avalanche Current
40
A
Electrical Characteristics - OFF
V
(BR)DSS
Drain-Source
Breakdown Voltage
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
I
GSS
Gate-Body Leakage
Current (V
DS
= 0)
Electrical Characteristics - ON
V
GS(th)
Gate Threshold Voltage
R
DS(on)
Static Drain-Source On
Resistance
I
D(on)
On State Drain Current
Electrical Characteristics - Dynamic
g
fs
Forward Transconductance
C
ies
Input Capacitance
C
oes
Output Capacitance
C
res
Reverse Transfer Capacitance
Electrical Characteristics - Switching On
T
d(on)
Turn-On Time
t
r
Rise Time
(di/dt)
on
Turn-On Current Slope
60
V
I
D
= 250 μA, V
GS
= 0
250
1000
±100
μA
μA
nA
V
DS
= Max. Rat.
V
DS
= Max. Rat. x 0.8, T
C
= 125°C
V
GS
= ±20 V
2
4
V
V
DS
= V
GS
, I
D
= 250 μA
V
GS
= 10 V, I
D
= 40 A
T
C
= 100°C
V
DS
> I
D(on)
x R
DS(on)max
, V
GS
= 10 V
0.016
0.032
75
A
25
S
pF
pF
pF
V
DS
> I
D(on)
x R
DS(on)max
, I
D
= 40 A
V
DS
= 25 V
V
GS
= 0
f = 1 mHz
4100
1800
420
190
900
150
nS
nS
A/μS
V
DD
= 25 V, I
D
= 40 A
R
G
= 50 , V
GS
= 10 V
V
DD
= 25 V, I
D
= 40 A
R
G
= 50 , V
GS
= 10 V
V
DD
= 25 V, I
D
= 40 A, V
GS
= 10 V
Q
g
Total Gate Charge
130
nC
Electrical Characteristics - Switching Off
T
r(Voff)
Off Voltage Rise Time
t
f
Fall Time
t
cross
Cross-Over Time
Electrical Characteristics - Source Drain Diode
I
SD
Source Drain Current
I
SDM
*
Source Drain Current (pulsed)
V
SD
Forward On Voltage
t
rr
Reverse Recovery Time
360
280
600
nS
nS
nS
V
DD
= 40 V, I
D
= 75 A
R
G
= 50 , V
GS
= 10 V
75
300
1.5
A
A
V
nS
I
SD
= 75 A, V
GS
= 0
I
SD
= 75 A, di/dt = 100 A/μs
V
R
= 25 V
120
Q
rr
I
RRM
*Pulsed: Pulse Duration 300μS, Duty Cycle 1.5%.
Reverse Recovery Charge
Reverse Recovery Current
0.45
6.5
μC
A
相關(guān)PDF資料
PDF描述
OM55N10SC LOW VOLTAGE, LOW RDS(on) POWER MOSFETS IN HERMETIC ISOLATED PACKAGE
OM60N10SC LOW VOLTAGE, LOW RDS(on) POWER MOSFETS IN HERMETIC ISOLATED PACKAGE
OM75N05SA LOW VOLTAGE, LOW RDS(on) POWER MOSFETS IN HERMETIC ISOLATED PACKAGE
OM6219SP1 SC70/&#181;DFN, Single/Dual Low-Voltage, Low-Power &#181;P Reset Circuits
OM6220SP1 TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 200V V(BR)DSS | 25A I(D) | SIP
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
OM55N10SC 制造商:未知廠家 制造商全稱:未知廠家 功能描述:LOW VOLTAGE, LOW RDS(on) POWER MOSFETS IN HERMETIC ISOLATED PACKAGE
OM55N10SW 制造商:未知廠家 制造商全稱:未知廠家 功能描述:100V Single N-Channel Hi-Rel MOSFET in a D3 package
OM5604 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Multimedia radio tuner
OM5605 制造商:Ohmite Mfg Co 功能描述:
OM5606 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Multimedia radio tuner
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*