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參數(shù)資料
| 型號： | OM55N10SA |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | LOW VOLTAGE, LOW RDS(on) POWER MOSFETS IN HERMETIC ISOLATED PACKAGE |
| 中文描述： | 低電壓，低的RDS（on）在朗格隔離封裝功率MOSFET |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 75K |
| 代理商： | OM55N10SA |
3.1 - 48
OM55N10SA - OM75N06SC
3.1
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°C unless otherwise noted)
55N10SA
55N10SC
75N06SA
75N06SC
75N05SA
75N05SC
Parameter
60N10SC
Units
V
DS
Drain-Source Voltage
100
100
60
50
V
V
DGR
Drain-Gate Voltage (R
GS
= 1 M )
100
100
60
50
V
I
D
@ T
C
= 25°C
Continuous Drain Current
2
60
55
75
75
A
I
D
@ T
C
= 100°C
Continuous Drain Current
2
37
33
45
45
A
I
DM
Pulsed Drain Current
1
180
180
225
225
A
P
D
@ T
C
= 25°C
Maximum Power Dissipation
130
125
125
125
W
P
D
@ T
C
= 100°C
Maximum Power Dissipation
55
50
50
50
W
Junction-To-Case
Linear Derating Factor
1.00
1.00
1.00
1.00
W/°C
T
J
Operating and
T
stg
Storage Temperature Range
-55 to 150
-55 to 150
-55 to 150
-55 to 150
°C
Lead Temperature (1/16" from case for 10 secs.)
300
300
300
300
°C
1 Pulse Test:
Pulse width 300 μsec. Duty Cycle 1.5%.
2 Package Limited:
SA I
D
= 25A & SC I
D
= 35A @ 25°C
THERMAL RESISTANCE
R
thJC
PACKAGE LIMITATIONS
Junction-to-Case
1.0
°C/W
Parameters
TO254AA
TO-258AA
Unit
I
D
Continuous Drain Current
25
35
A
Linear Derating Factor, Junction-to-Ambient
.020
.025
W/°C
R
thJA
Thermal Resistance, Junction-to-Ambient (Free Air Operation)
MECHANICAL OUTLINE
50
40
°C/W
.707
.750
.835
.695
.165
.200 TYP.
.550
.270
.045
.140 TYP.
.092 MAX.
.065
.005
TO-258AA
.144 DIA.
.050
.040
.260
.685
.800
.545
.550
.045
.550
.150 TYP.
TO-254AA
.150 TYP.
.005
Note: MOSFETs are also available in Z-Tab, dual and quad pak styles. Duals and quads available in non-gate versions only.
Please call the factory for more information.
PACKAGE OPTIONS
MOD PAK
Z-TAB
6 PIN SIP
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