參數(shù)資料
型號: NUP8100DT1G
廠商: ON SEMICONDUCTOR
元件分類: 參考電壓二極管
英文描述: Low Capacitance Transient Voltage Suppressor Array
中文描述: 300 W, BIDIRECTIONAL, 8 ELEMENT, SILICON, TVS DIODE
封裝: LEAD FREE, CASE 751B, SOIC-16
文件頁數(shù): 4/4頁
文件大?。?/td> 108K
代理商: NUP8100DT1G
NUP8100D
http://onsemi.com
4
PACKAGE DIMENSIONS
SOIC
16
CASE 751B
ISSUE J
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
IN EXCESS OF THE D DIMENSION AT
MAXIMUM MATERIAL CONDITION.
1
8
16
9
SEATING
PLANE
F
J
M
R
X 45
G
8 PL
P
B
A
M
0.25 (0.010)
B
S
T
D
K
C
16 PL
S
B
M
0.25 (0.010)
A
S
T
DIM
A
B
C
D
F
G
J
K
M
P
R
MIN
9.80
3.80
1.35
0.35
0.40
1.27 BSC
0.19
0.10
0
5.80
0.25
MAX
10.00
4.00
1.75
0.49
1.25
MIN
0.386
0.150
0.054
0.014
0.016
0.050 BSC
0.008
0.004
0
0.229
0.010
MAX
0.393
0.157
0.068
0.019
0.049
INCHES
MILLIMETERS
0.25
0.25
7
6.20
0.50
0.009
0.009
7
0.244
0.019
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