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參數(shù)資料
| 型號： | NUP8100DT1G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Low Capacitance Transient Voltage Suppressor Array |
| 中文描述： | 300 W, BIDIRECTIONAL, 8 ELEMENT, SILICON, TVS DIODE |
| 封裝： | LEAD FREE, CASE 751B, SOIC-16 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 108K |
| 代理商： | NUP8100DT1G |
NUP8100D
http://onsemi.com
2
MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
ESD Discharge IEC61000
4
2
Air Discharge
Contact Discharge
V
PP
15
8.0
kV
Peak Power Dissipation (8 x 20 S @ T
A
= 25
°
C)
P
pk
(Note 1)
300
W
Operating Temperature Range
T
OP
40 to 85
°
C
Storage Temperature Range
T
STG
55 to 150
°
C
Maximum Lead Temperature for Soldering Purposes (1.8 in from case for 10 seconds)
T
L
260
°
C
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. Nonrepetitive current per Figure 1.
ELECTRICAL CHARACTERISTICS
(T
J
= 25
°
C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Maximum Reverse Working Voltage
V
RWM
5.0
V
Breakdown Voltage
V
BR
I
R
= 1.0 mA
6.0
V
Leakage Current
I
R
V
RWM
= 5.0 V
20
A
Clamping Voltage
V
c
I
PP
= 12 A
26
V
Capacitance
C
line
f = 1 MHz, V
R
= 0 V
15
pF
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