參數(shù)資料
型號: NUD3048MT1G
廠商: ON SEMICONDUCTOR
元件分類: 小信號晶體管
英文描述: FET Switch 100 V, 800 m ohm, N−Channel, TSOP−6
中文描述: 1200 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: LEAD FREE, CASE 318G-02, TSOP-6
文件頁數(shù): 3/4頁
文件大?。?/td> 48K
代理商: NUD3048MT1G
NUD3048
http://onsemi.com
3
Figure 2. V
DS(on)
Variation with I
DS
and
Gate Voltage
0
0.1
0.2
0.3
0.4
0.5
0
0.1
0.2
0.3
0.4
0.5
I
DS
(A)
V
D
V
GS
= 2.0 V
V
GS
= 3.0 V
V
GS
= 5.0 V
V
GS
= 7.0 V
V
GS
= 10 V
0.55
0.60
0.65
0.70
0
0.05 0.1
0.15
0.2 0.25
I
D
(A)
0.3 0.35
0.4
0.45
Figure 3. On Resistance Variation with
Drain Current and Gate Voltage
R
D
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
10
8
6
4
2
0
2
4
6
8
10
Figure 4. Variation of R
DS(on)
with
Temperature and Gate Voltage at I
D
= 100 mA
I
G
V
GS
(V)
V
GS
= 4.5 V
V
GS
= 10 V
0
0.2
0.4
0.6
0.8
1
1.2
1.4
50
0
50
100
150
Figure 5. Gate Leakage Current Variation
with Gate Voltage
R
DS(on)
VARIATION WITH TEMPERATURE
R
D
V
GS
= 4.5 V
V
GS
= 10 V
0.5
6.00E05
6.20E05
6.40E05
6.60E05
6.80E05
7.00E05
7.20E05
7.40E05
40.0 20.0
0.0
20.0
40.0
60.0
80.0
100.0 120.0
Figure 6. Variation of Leakage Current I
DSS
(A)
with V
GS
= 0 V and V
DS
= 100 V
L
D
S
JUNCTION TEMPERATURE
I
DSS
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