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參數(shù)資料
| 型號(hào)： | NUD3048MT1G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | FET Switch 100 V, 800 m ohm, N−Channel, TSOP−6 |
| 中文描述： | 1200 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | LEAD FREE, CASE 318G-02, TSOP-6 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 48K |
| 代理商： | NUD3048MT1G |
NUD3048
http://onsemi.com
2
MAXIMUM RATINGS
Symbol
Rating
Value
Unit
V
DSS
Drain to Source Voltage – Continuous
100
V
V
G1SS
Gate to Source Voltage – Continuous @ 1.0 mA
15
V
I
D
Drain Current – Continuous (T
A
=25 C)
(Note 1)
(Note 2)
0.7
1.2
A
P
D
Power Dissipation (T
A
=25 C) (Note 1)
(Note 2)
0.66
1.56
W
V
G2SS
Gate Resistor to Source Voltage – Continuous
100
V
T
Jmax
Maximum Junction Temperature
150
°
C
R
JA
Thermal Impedance (JunctiontoAmbient) (Note 1)
Thermal Impedance (JunctiontoAmbient) (Note 2)
190
80
°
C/W
ESD
Human Body Model (HBM) Class 2
Machine Model Class A
According to EIA/JESD22/A114 Specification
2000
100
V
V
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values
(not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage
may occur and reliability may be affected.
ELECTRICAL CHARACTERISTICS
(T
J
=25 C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain to Source Leakage Current (V
DS
= 80 V, V
GS
= 0 V)
I
DSS
20
100
A
Gate Body Leakage Current
(V
GS
=10 V, V
DS
= 0 V)
(V
GS
= 10 V, V
DS
= 0 V, T
J
= 125
°
C)
I
GSS
I
GSS
3.0
6.0
10
20
A
ON CHARACTERISTICS
Gate Threshold Voltage (I
D
= 1.0 mA)
V
GS
1.3
1.7
2.0
V
Drain to Source Resistance (V
GS
= 4.5 V, I
D
= 100 mA)
R
DS(on)
0.65
0.82
Drain to Source Resistance (V
GS
= 10 V, I
D
= 100 mA)
R
DS(on)
0.6
0.72
DYNAMIC CHARACTERISTICS
Input Capacitance (V
DS
= 5.0 V, V
GS
= 0 V, f = 10 kHz)
C
iss
135
pF
Output Capacitance (V
DS
= 5.0 V, V
GS
= 0 V, f = 10 kHz)
C
oss
75
pF
Transfer Capacitance (V
DS
= 5.0 V, V
GS
= 0 V, f = 10 kHz)
C
rss
26
pF
GATE BIAS CHARACTERISTICS
Gate Resistor
R
G
75
100
125
k
Gate Zener Breakdown Voltage (I
Z
= 1.0 mA) (Note 3)
Gate Zener Breakdown Voltage (I
Z
= 3.0 mA) (Note 4)
1. Min pad, 1 oz. Cu.
2. 1 inch pad, 1 oz Cu.
3. Measured from gate 1 to source.
4. Measured from gate 2 to source.
V
Z
15
100
17
115
V
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