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參數(shù)資料
| 型號： | NTS4001N |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | 30V,270mA,Single N Channel,SC70 Small Signal MOSFET(30V,270mA,N溝道小信號MOSFET) |
| 中文描述： | 30V的，二百七十零毫安，單個N頻道，采用SC70小信號MOSFET（30V的，二百七十零毫安，?溝道小信號MOSFET的） |
| 文件頁數(shù)： | 4/5頁 |
| 文件大?。?/td> | 127K |
| 代理商： | NTS4001N |
NTS4001N
http://onsemi.com
4
TYPICAL PERFORMANCE CURVES
(T
J
= 25
°
C unless otherwise noted)
V
DS
= 0 V
V
GS
= 0 V
0
10
10
30
20
10
0
25
GATE
TO
SOURCE OR DRAIN
TO
SOURCE VOLTAGE (VOLTS)
C
0
0.2
4
1
0
Q
G
, TOTAL GATE CHARGE (nC)
V
G
G
T
S
T
J
= 25
°
C
C
oss
C
iss
C
rss
I
D
= 0.1 A
T
J
= 25
°
C
50
0.6
2
3
Q
GD
Q
GS
5
40
5
V
GS
V
DS
15
0.4
1
0.65
0.02
0
0.5
V
SD
, SOURCE
TO
DRAIN VOLTAGE (VOLTS)
I
S
,
V
GS
= 0 V
T
J
= 25
°
C
0.7
0.75
0.1
Figure 7. Capacitance Variation
Figure 8. Gate
to
Source Voltage vs. Total
Gate Charge
Figure 9. Diode Forward Voltage vs. Current
5
0.8
Q
G
0.6
0.55
0.04
0.06
0.08
20
C
rss
C
iss
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| NTS4001NT1 | 功能描述:MOSFET 30V 270mA N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTS4001NT1G | 功能描述:MOSFET 30V 270mA N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTS4001NT1G-CUT TAPE | 制造商:ON 功能描述:NTS Series N-Channel 30 V 1 Ohm 330 mW SMT Small Signal MOSFET - SOT-323 |
| NTS4101P | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET -20 V, -1.37 A, Single P-Channel, SC-70 |
| NTS4101P_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET -20 V, -1.37 A, Single P-Channel, SC-70 |
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