- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄361165 > NTS4001N (ON SEMICONDUCTOR) 30V,270mA,Single N Channel,SC70 Small Signal MOSFET(30V,270mA,N溝道小信號MOSFET) PDF資料下載
參數(shù)資料
| 型號： | NTS4001N |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | 30V,270mA,Single N Channel,SC70 Small Signal MOSFET(30V,270mA,N溝道小信號MOSFET) |
| 中文描述： | 30V的，二百七十零毫安，單個N頻道，采用SC70小信號MOSFET（30V的，二百七十零毫安，?溝道小信號MOSFET的） |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 127K |
| 代理商： | NTS4001N |
NTS4001N
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
J
= 25
°
C unless otherwise stated)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain
to
Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 100 A
30
V
Drain
to
Source Breakdown Voltage
Temperature Coefficient
V
(BR)DSS
/T
J
60
mV/
°
C
Zero Gate Voltage Drain Current
I
DSS
V
GS
= 0 V, V
DS
= 30 V
V
DS
= 0 V, V
GS
=
±
10
V
1.0
A
Gate
to
Source Leakage Current
I
GSS
±
1.0
A
ON CHARACTERISTICS
(Note 2)
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 100 A
0.8
1.2
1.5
V
Gate Threshold
Temperature Coefficient
V
GS(TH)
/T
J
3.4
mV/
°
C
Drain
to
Source On Resistance
R
DS(on)
V
GS
= 4.0
V, I
D
= 10 mA
1.0
1.5
V
GS
= 2.5
V, I
D
= 10 mA
1.5
2.0
Forward Transconductance
g
FS
V
DS
= 3.0
V, I
D
= 10 mA
80
mS
CHARGES AND CAPACITANCES
Input Capacitance
C
ISS
V
GS
= 0 V, f = 1.0 MHz,
V
DS
= 5.0
V
20
33
pF
Output Capacitance
C
OSS
19
32
Reverse Transfer Capacitance
C
RSS
7.25
12
Total Gate Charge
Q
G(TOT)
V
GS
= 5.0 V, V
DS
= 24
V,
I
D
= 0.1
A
0.9
1.3
nC
Threshold Gate Charge
Q
G(TH)
0.2
Gate
to
Source Charge
Q
GS
0.3
Gate
to
Drain Charge
Q
GD
0.2
SWITCHING CHARACTERISTICS
(Note 3)
Turn
On Delay Time
td
(ON)
V
GS
= 4.5
V, V
DD
= 5.0
V,
I
D
= 10 mA, R
G
= 50
17
ns
Rise Time
tr
23
Turn
Off Delay Time
td
(OFF)
94
Fall Time
tf
82
DRAIN
SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V,
I
S
= 10 mA
T
J
= 25
°
C
T
J
= 125
°
C
0.65
0.7
V
0.43
Reverse Recovery Time
t
RR
V
GS
= 0 V, dI
/dt = 8.0 A/ s,
I
S
= 10 mA
5.0
ns
2. Pulse Test: pulse width
≤
300 s, duty cycle
≤
2%.
3. Switching characteristics are independent of operating junction temperatures.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NTV0512M | 3kVDC Isolated 1W Dual Output SM DC-DC Converters |
| NTV1205M | 3kVDC Isolated 1W Dual Output SM DC-DC Converters |
| NTV1209M | 3kVDC Isolated 1W Dual Output SM DC-DC Converters |
| NTV1212M | 3kVDC Isolated 1W Dual Output SM DC-DC Converters |
| NTV1215M | 3kVDC Isolated 1W Dual Output SM DC-DC Converters |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NTS4001NT1 | 功能描述:MOSFET 30V 270mA N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTS4001NT1G | 功能描述:MOSFET 30V 270mA N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTS4001NT1G-CUT TAPE | 制造商:ON 功能描述:NTS Series N-Channel 30 V 1 Ohm 330 mW SMT Small Signal MOSFET - SOT-323 |
| NTS4101P | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET -20 V, -1.37 A, Single P-Channel, SC-70 |
| NTS4101P_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET -20 V, -1.37 A, Single P-Channel, SC-70 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。