參數(shù)資料
型號: NTR1P02LT1
廠商: ON SEMICONDUCTOR
元件分類: 小信號晶體管
英文描述: Power MOSFET
中文描述: 1300 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
封裝: MINIATURE, CASE 318-08, 3 PIN
文件頁數(shù): 5/6頁
文件大?。?/td> 46K
代理商: NTR1P02LT1
NTR1P02T1
http://onsemi.com
5
PACKAGE DIMENSIONS
SOT23 (TO236)
CASE 31809
ISSUE AJ
SOLDERING FOOTPRINT*
mm
inches
SCALE 10:1
0.8
0.031
0.9
0.035
0.95
0.037
0.95
0.037
2.0
0.079
1
3
2
A
L
B
S
V
G
D
H
C
K
J
DIM
A
B
C
D
G
H
J
K
L
S
V
MIN
0.1102
0.0472
0.0385
0.0140
0.0670
0.0040
0.0034
0.0180
0.0350
0.0830
0.0177
MAX
0.1197
0.0551
0.0498
0.0200
0.0826
0.0098
0.0070
0.0236
0.0401
0.0984
0.0236
MIN
2.80
1.20
0.99
0.36
1.70
0.10
0.085
0.45
0.89
2.10
0.45
MAX
3.04
1.40
1.26
0.50
2.10
0.25
0.177
0.60
1.02
2.50
0.60
MILLIMETERS
INCHES
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIUMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 31801, 02, AND 06 OBSOLETE, NEW
STANDARD 31809.
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
相關(guān)PDF資料
PDF描述
NTR1P02LT1G Power MOSFET
NTR1P02LT3 Power MOSFET
NTR1P02LT3G Power MOSFET
NTR1P02T3 Power MOSFET
NTR4003N 30V N-Channel PowerTrench MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NTR1P02LT1_06 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET -20 V, -1.3 A, P-Channel SOT-23 Package
NTR1P02LT1G 功能描述:MOSFET -20V -1.3A P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTR1P02LT1G-CUT TAPE 制造商:ON 功能描述:NTR Series P-Channel 20 V 220 mOhm 440 mW Surface Mount Power MOSFET - SOT-23
NTR1P02LT1H 制造商:ON Semiconductor 功能描述:PFET SOT23 20V 1.3A 0.222
NTR1P02LT3 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET -20 V, -1.3 A, P-Channel SOT-23 Package