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參數(shù)資料
| 型號(hào)： | NTR1P02LT1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | Power MOSFET |
| 中文描述： | 1300 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB |
| 封裝： | MINIATURE, CASE 318-08, 3 PIN |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大小： | 46K |
| 代理商： | NTR1P02LT1 |
NTR1P02T1
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
(V
GS
= 0 V, I
D
= 10 A)
(Positive Temperature Coefficient)
V
(BR)DSS
20
32
V
mV/
°
C
Zero Gate Voltage Drain Current
(V
DS
= 20 V, V
GS
= 0 V, T
J
= 25
°
C)
(V
DS
= 20 V, V
GS
= 0 V, T
J
= 150
°
C)
I
DSS
1.0
10
A
GateBody Leakage Current (V
GS
=
±
20 V, V
DS
= 0 V)
I
GSS
±
100
nA
ON CHARACTERISTICS
(Note 1)
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 250 A)
(Negative Temperature Coefficient)
V
GS(th)
1.1
1.9
4.0
2.3
V
mV/
°
C
Static DraintoSource OnState Resistance
(V
GS
= 10 V, I
D
= 1.5 A)
(V
GS
= 4.5 V, I
D
= 0.75 A)
R
DS(on)
0.148
0.235
0.180
0.280
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 5 V, V
GS
= 0 V, f = 1.0 MHz)
C
iss
165
pF
Output Capacitance
(V
DS
= 5 V, V
GS
= 0 V, f = 1.0 MHz)
C
oss
110
Reverse Transfer Capacitance
(V
DS
= 5 V, V
GS
= 0 V, f = 1.0 MHz)
C
rss
35
SWITCHING CHARACTERISTICS
(Note 2)
TurnOn Delay Time
(V
DD
= 15 V, I
D
= 1 A, V
GS
= 5 V, R
G
= 2.5 )
t
d(on)
7.0
ns
Rise Time
(V
DD
= 15 V, I
D
= 1 A, V
GS
= 5 V, R
G
= 2.5 )
t
r
9.0
TurnOff Delay Time
(V
DD
= 15 V, I
D
= 1 A, V
GS
= 5 V, R
G
= 2.5 )
t
d(off)
9.0
Fall Time
(V
DD
= 15 V, I
D
= 1 A, V
GS
= 5 V, R
G
= 2.5 )
t
f
3.0
Total Gate Charge
(V
DS
= 15 V, V
GS
= 5 V, I
D
= 0.8 A)
Q
tot
2.5
nC
GateSource Charge
(V
DS
= 15 V, V
GS
= 5 V, I
D
= 0.8 A)
Q
gs
0.75
GateDrain Charge
(V
DS
= 15 V, V
GS
= 5 V, I
D
= 0.8 A)
Q
gd
1.0
BODYDRAIN DIODE RATINGS
(Note 1)
Diode Forward OnVoltage (Note 2)
(I
S
= 0.6 A, V
GS
= 0 V)
(I
S
= 0.6 A, V
GS
= 0 V, T
J
= 150
°
C)
V
SD
0.8
0.6
1.0
V
Reverse Recovery Time
(I
S
= 1 A dI /dt
S
/dt = 100 A/ s, V
GS
= 0 V)
t
rr
13.5
ns
t
a
10.5
t
b
3.0
Reverse Recovery Stored Charge
(I
S
= 1 A, dI
S
/dt = 100 A/ s, V
GS
= 0 V)
1. Pulse Test: Pulse Width
≤
300 s, Duty Cycle
≤
2%.
2. Switching characteristics are independent of operating junction temperature.
Q
RR
0.008
C
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