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參數(shù)資料
| 型號： | NTR0202PLT3G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Power MOSFET −20 V, −400 mA, P−Channel SOT−23 Package |
| 中文描述： | 400 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB |
| 封裝： | LEAD FREE, MINIATURE, CASE 318-09, TO-236, 3 PIN |
| 文件頁數(shù)： | 4/6頁 |
| 文件大?。?/td> | 54K |
| 代理商： | NTR0202PLT3G |
NTR0202PL
http://onsemi.com
4
0
20
40
60
80
100
10
5
0
5
10
15
20
GATETOSOURCE OR DRAINTOSOURCE VOLTAGE
(VOLTS)
Figure 7. Capacitance Variation
C
rss
C
oss
C
iss
T
J
= 25
°
C
C
V
GS
V
DS
0
2.5
5
7.5
10
0
0.5
1
1.5
2
Q
G
, TOTAL GATE CHARGE (nC)
Figure 8. GatetoSource and
DraintoSource Voltage versus Total
Charge
G
,
T
J
= 25
°
C
I
D
= 0.4 A
Q
T
Q
2
Q
1
D
,
1
100
1
10
100
10
t
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
V
DD
= 16 V
I
D
= 0.2 A
V
GS
= 4.5 V
t
r
t
d(off)
t
d(on)
t
f
R
G
, GATE RESISTANCE ( )
0
0.25
0.5
0.75
1
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
V
SD
, SOURCETODRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage versus
Current
S
,
V
GS
= 0 V
T
J
= 25
°
C
C
rss
C
iss
C
rss
C
iss
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