參數(shù)資料
型號: NTR0202PLT3G
廠商: ON SEMICONDUCTOR
元件分類: 小信號晶體管
英文描述: Power MOSFET −20 V, −400 mA, P−Channel SOT−23 Package
中文描述: 400 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
封裝: LEAD FREE, MINIATURE, CASE 318-09, TO-236, 3 PIN
文件頁數(shù): 3/6頁
文件大?。?/td> 54K
代理商: NTR0202PLT3G
NTR0202PL
http://onsemi.com
3
0
0.25
0.5
0.75
0
0.25
0.5
0.75
1.0
V
DS
, DRAINTOSOURCE VOLTAGE (VOLTS)
D
,
Figure 1. OnRegion Characteristics
V
GS
= 10 V
6 V
5.5 V
5 V
4.5 V
4 V
3.5 V
3 V
2.5 V
T
J
= 25
°
C
0
0.25
0.5
0.75
1
0
1
2
3
4
5
V
GS
, GATETOSOURCE VOLTAGE (VOLTS)
D
,
Figure 2. Transfer Characteristics
V
DS
10 V
T
J
= 25
°
C
T
J
= 125
°
C
T
J
= 40
°
C
0
0.125
0.5
1
1.5
0.25
0.375
0.5
I
D
, DRAIN CURRENT (AMPS)
R
D
,
Figure 3. OnResistance versus Drain Current
T
J
= 150
°
C
T
J
= 25
°
C
T
J
= 40
°
C
0
0.25
0.5
0.75
1.0
0.125
0.25
0.375
0.5
0.625
0.75
0.875 1.0
I
D
, DRAIN CURRENT (AMPS)
R
D
,
Figure 4. OnResistance versus Drain
Current and Gate Voltage
0
40
0.5
1
1.5
2
2.5
15
10
35
60
85
110
135
T
J
, JUNCTION TEMPERATURE (
°
C)
R
D
,
R
Figure 5. OnResistance Variation with
Temperature
I
D
= 0.05 A
V
GS
= 4.5 V
I
D
= 0.2 A
V
GS
= 10 V
0.1
1
10
1000
2
6
10
14
18
100
V
DS
, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 6. DraintoSource Leakage
Current versus Voltage
V
GS
= 0 V
T
J
= 150
°
C
T
J
= 25
°
C
D
,
150
V
GS
= 4.5 V
V
GS
= 10 V
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