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參數(shù)資料
| 型號： | NTP12N50 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | Power MOSFET 12 Amps, 500 Volts N-Channel(12A,500V,N溝道增強型MOS場效應(yīng)管(TO-220封裝）) |
| 中文描述： | 12 A, 500 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | CASE 221A-09, 3 PIN |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 45K |
| 代理商： | NTP12N50 |
NTP12N50, NTB12N50
http://onsemi.com
3
PACKAGE DIMENSIONS
TO–220 THREE–LEAD
TO–220AB
CASE 221A–09
ISSUE AA
STYLE 5:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
MIN
0.570
0.380
0.160
0.025
0.142
0.095
0.110
0.018
0.500
0.045
0.190
0.100
0.080
0.045
0.235
0.000
0.045
---
MAX
0.620
0.405
0.190
0.035
0.147
0.105
0.155
0.025
0.562
0.060
0.210
0.120
0.110
0.055
0.255
0.050
---
0.080
MIN
14.48
9.66
4.07
0.64
3.61
2.42
2.80
0.46
12.70
1.15
4.83
2.54
2.04
1.15
5.97
0.00
1.15
---
MAX
15.75
10.28
4.82
0.88
3.73
2.66
3.93
0.64
14.27
1.52
5.33
3.04
2.79
1.39
6.47
1.27
---
2.04
MILLIMETERS
INCHES
B
Q
H
Z
L
V
G
N
A
K
F
1
2 3
4
D
SEATING
PLANE
–T–
C
S
T
U
R
J
D2PAK
CASE 418B–03
ISSUE D
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
SEATING
PLANE
S
G
D
–T–
M
0.13 (0.005)
T
2
3
1
4
3 PL
K
J
H
V
E
C
A
DIM
A
B
C
D
E
G
H
J
K
S
V
MIN
0.340
0.380
0.160
0.020
0.045
0.100 BSC
0.080
0.018
0.090
0.575
0.045
MAX
0.380
0.405
0.190
0.035
0.055
MIN
8.64
9.65
4.06
0.51
1.14
2.54 BSC
2.03
0.46
2.29
14.60
1.14
MAX
9.65
10.29
4.83
0.89
1.40
MILLIMETERS
INCHES
0.110
0.025
0.110
0.625
0.055
2.79
0.64
2.79
15.88
1.40
–B–
M
B
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