參數(shù)資料
型號： NTMS7N03R2
廠商： ON SEMICONDUCTOR
元件分類： JFETs
英文描述： Power MOSFET 7 Amps, 30 Volts
中文描述： 4.8 A, 30 V, 0.023 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： CASE 751-07, SO-8
文件頁數(shù)： 2/12頁
文件大?。?/td> 97K
代理商： NTMS7N03R2
NTMS7N03R2
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
C
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage (Notes 5 and 7)
(V
GS
= 0 Vdc, I
D
= 0.25 mAdc)
Temperature Coefficient (Positive)
V
(BR)DSS
30
-
-
41
-
-
Vdc
mV/
°
C
Zero Gate Voltage Drain Current
(V
DS
= 30 Vdc, V
GS
= 0 Vdc)
(V
DS
= 30 Vdc, V
GS
= 0 Vdc, T
J
= 125
°
C)
I
DSS
-
-
0.02
-
1.0
10
μ
Adc
Gate-Body Leakage Current (V
GS
=
±
20 Vdc, V
DS
= 0)
I
GSS
-
-
100
nAdc
ON CHARACTERISTICS
Gate Threshold Voltage (Note 5)
(V
DS
= V
GS
, I
D
= 0.25 mAdc)
Threshold Temperature Coefficient (Negative)
V
GS(th)
1.0
-
1.6
4.0
3.0
-
Vdc
mV/
°
C
Static Drain-to-Source On-Resistance (Notes 5 and 7)
(V
GS
= 10 Vdc, I
D
= 7.0 Adc)
(V
GS
= 4.5 Vdc, I
D
= 3.5 Adc)
R
DS(on)
-
-
18.6
23.5
23
28
m
Drain-to-Source On-Voltage (V
GS
= 10 Vdc, I
D
= 5.0 Adc) (Notes 5 and 7)
V
DS(on)
-
93
115
mV
Forward Transconductance (V
DS
= 15 Vdc, I
D
= 2.0 Adc) (Note 5)
g
FS
3.0
13
-
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 25 Vdc, V
GS
= 0 Vdc,
f = 1.0 MHz)
C
iss
-
1064
1190
pF
Output Capacitance
C
oss
-
300
490
Transfer Capacitance
C
rss
-
94
120
SWITCHING CHARACTERISTICS
(Note 6)
Turn-On Delay Time
t
d(on)
-
15
30
ns
Rise Time
(V
DD
= 10 Vdc, I
D
= 5.0 Adc,
= 4 5 Vdc
V
GS
= 4.5 Vdc,
= 9.1
R
G
9.1
) (Note 5)
t
r
-
71
185
Turn-Off Delay Time
t
d(off)
-
27
70
Fall Time
t
f
-
38
80
Turn-On Delay Time
t
d(on)
-
8.0
-
Rise Time
(V
DD
= 10 Vdc, I
D
= 5.0 Adc,
V
GS
= 10 Vdc,
= 9.1
R
G
9.1
) (Note 5)
t
r
-
38
-
Turn-Off Delay Time
t
d(off)
-
33
-
Fall Time
t
f
-
49
Gate Charge
Q
T
-
26
43
nC
= 16 Vdc, I
= 5.0 Adc,
(V
DS
16 Vdc, I
D
5.0 Adc,
V
GS
= 10 Vdc) (Note 5)
Q
1
-
3.1
-
Q
2
-
6.0
-
Q
3
-
5.5
-
SOURCE-DRAIN DIODE CHARACTERISTICS
Forward On-Voltage (Note 5)
(I
S
= 7.0 Adc, V
GS
= 0 Vdc) (Note 5)
(I
S
= 7.0 Adc, V
GS
= 0 Vdc,
T
J
= 125
°
C)
V
SD
-
-
0.82
0.67
1.1
-
Vdc
Reverse Recovery Time
t
rr
-
27
-
ns
= 7.0 Adc, V
= 0 Vdc,
(I
S
7.0 Adc, V
GS
0 Vdc,
dI
S
/dt = 100 A/
μ
s) (Note 5)
t
a
-
15
-
t
b
-
11.5
-
Reverse Recovery Stored Charge
5. Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
6. Switching characteristics are independent of operating junction temperature.
7. Reflects Typical Values.
Max limit
Q
RR
-
0.02
-
μ
C
Cpk
Typ
3
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