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參數(shù)資料
| 型號： | NTMS4704N |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | Power MOSFET 30V, 12.3A, Single N Channel, SO8(30V, 12.3A，功率MOSFET) |
| 中文描述： | 功率MOSFET 30V的，12.3A，單N通道，采用SO8（30V的，12.3A，功率MOSFET的） |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 67K |
| 代理商： | NTMS4704N |
NTMS4704N
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
J
= 25
°
C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250 A
30
V
DraintoSource Breakdown Voltage
Temperature Coefficient
V
(BR)DSS
/T
J
28
mV/
°
C
Zero Gate Voltage Drain Current
I
DSS
V
GS
= 0 V, V
DS
= 24 V
T
J
= 25
°
C
1.0
A
T
J
= 125
°
C
50
GatetoSource Leakage Current
I
GSS
V
DS
= 0 V, V
GS
=
±
20 V
±
100
nA
ON CHARACTERISTICS
(Note 3)
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250 A
1.0
2.5
V
Negative Threshold Temperature
Coefficient
V
GS(TH)
/T
J
5.0
mV/
°
C
DraintoSource On Resistance
R
DS(on)
V
GS
=
10
V, I
D
= 12.3 A
7.5
9.5
m
V
GS
= 4.5
V, I
D
= 10 A
10
12.5
Forward Transconductance
g
FS
V
DS
= 15 V, I
D
=
10 A
20
S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
C
iss
V
GS
=
0 V, f
=
1.0 MHz, V
DS
=
20 V
1225
pF
Output Capacitance
C
oss
580
Reverse Transfer Capacitance
C
rss
125
Total Gate Charge
Q
G(TOT)
V
GS
= 4.5 V, V
DS
= 15 V, I
D
=
10 A
12
17
nC
Threshold Gate Charge
Q
G(TH)
1.6
GatetoSource Charge
Q
GS
3.25
GatetoDrain Charge
Q
GD
5.25
Gate Resistance
R
G
1.8
SWITCHING CHARACTERISTICS
(Note 4)
TurnOn Delay Time
t
d(on)
V
GS
= 10 V, V
DD
= 15 V, I
D
= 1.0 A,
R
G
= 3.0
8.2
ns
Rise Time
t
r
5.4
TurnOff Delay Time
t
d(off)
28.4
Fall Time
t
f
10.5
DRAINSOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V, I
S
= 2.3 A
T
J
= 25
°
C
0.75
1.0
V
T
J
= 125
°
C
0.56
Reverse Recovery Time
t
RR
V
GS
= 0 V, d
IS
/d
t
= 100 A/ s,
I
S
= 2.3 A
35
ns
Charge Time
t
a
18
Discharge Time
t
b
17
Reverse Recovery Charge
Q
RR
2%.
33
nC
3. Pulse Test: pulse width = 300 s, duty cycle
4. Switching characteristics are independent of operating junction temperatures.
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| NTMS4704NR2 | 功能描述:MOSFET 30V 12.3A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTMS4704NR2G | 功能描述:MOSFET 30V 12.3A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTMS4705N | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 30 V, 12 A, Single N-Channel, SO-8 |
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| NTMS4705NR2G | 功能描述:MOSFET 30V 12A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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