參數(shù)資料
型號(hào)： NTMFS4839N
廠商： ON SEMICONDUCTOR
英文描述： Power MOSFET(功率MOSFET)
中文描述： 功率MOSFET（功率MOSFET的）
文件頁(yè)數(shù)： 2/6頁(yè)
文件大?。?/td> 94K
代理商： NTMFS4839N
NTMFS4839N
http://onsemi.com
2
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Value
Unit
Junction-to-Case (Drain)
R
JC
3.0
°
C/W
Junction-to-Ambient – Steady State (Note 3)
R
JA
57.7
Junction-to-Ambient – Steady State (Note )
R
JA
143.4
3. Surface-mounted on FR4 board using 1 sq-in pad, 1 oz Cu.
4. Surface-mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS
(T
J
= 25
°
C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250 A
30
V
Drain-to-Source Breakdown Voltage
Temperature Coefficient
V
(BR)DSS
/
T
J
25
mV/
°
C
Zero Gate Voltage Drain Current
I
DSS
V
GS
= 0 V,
V
DS
= 24 V
T
J
= 25
°
C
1
A
T
J
= 125
°
C
10
Gate-to-Source Leakage Current
I
GSS
V
DS
= 0 V, V
GS
=
±
20 V
±
100
nA
ON CHARACTERISTICS
(Note 5)
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250 A
1.5
2.5
V
Negative Threshold Temperature Coefficient
V
GS(TH)
/T
J
5.8
mV/
°
C
Drain-to-Source On Resistance
R
DS(on)
V
GS
= 10 V to
11.5 V
I
D
= 30 A
4.5
5.5
m
I
D
= 15 A
4.5
V
GS
= 4.5 V
I
D
= 30 A
8.4
9.5
I
D
= 15 A
8.4
Forward Transconductance
g
FS
V
DS
= 15 V, I
D
= 15 A
14.7
S
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
ISS
V
GS
= 0 V, f = 1 MHz, V
DS
= 12 V
1588
pF
Output Capacitance
C
OSS
352
Reverse Transfer Capacitance
C
RSS
196
Total Gate Charge
Q
G(TOT)
V
GS
= 4.5 V, V
DS
= 15 V; I
D
= 30 A
13
18
nC
Threshold Gate Charge
Q
G(TH)
1.6
Gate-to-Source Charge
Q
GS
4.8
Gate-to-Drain Charge
Q
GD
5.8
Total Gate Charge
Q
G(TOT)
V
GS
= 11.5 V, V
DS
= 15 V;
I
D
= 30 A
28
nC
SWITCHING CHARACTERISTICS
(Note 6)
Turn-On Delay Time
t
d(ON)
V
GS
= 4.5 V, V
DS
= 15 V, I
D
= 15 A,
R
G
= 3.0
12
ns
Rise Time
t
r
29
Turn-Off Delay Time
t
d(OFF)
18
Fall Time
t
f
7.0
Turn-On Delay Time
t
d(ON)
V
GS
= 11.5 V, V
DS
= 15 V,
I
D
= 15 A, R
G
= 3.0
8.0
ns
Rise Time
t
r
21
Turn-Off Delay Time
t
d(OFF)
24
Fall Time
t
f
7.0
5. Pulse Test: pulse width
6. Switching characteristics are independent of operating junction temperatures.
300 s, duty cycle
2%.
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