參數(shù)資料
型號(hào)： NTMFS4122N
廠商： ON SEMICONDUCTOR
英文描述： 30V,23A,Single N Channel,SO 8 Flat Lead Power MOSFET(30V,23A,N溝道功率MOSFET)
中文描述： 30V的，第23A條，單個(gè)N頻道，8平引腳功率MOSFET（30V的，第23A條，?溝道功率MOSFET的）
文件頁(yè)數(shù)： 2/6頁(yè)
文件大小： 64K
代理商： NTMFS4122N
NTMFS4122N
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
J
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250 A
30
V
DraintoSource Breakdown Voltage
Temperature Coefficient
V
(BR)DSS
/T
J
23
mV/
°
C
Zero Gate Voltage Drain Current
I
DSS
V
GS
= 0 V, V
DS
= 24 V
T
J
= 25
°
C
T
J
= 125
°
C
1.0
A
10
GatetoSource Leakage Current
I
GSS
V
DS
= 0 V, V
GS
= 20 V
100
nA
ON CHARACTERISTICS
(Note 3)
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250 A
1.0
2.5
V
Negative Threshold Temperature Coefficient
V
GS(TH)
/T
J
R
DS(on)
6.6
mV/
°
C
DraintoSource On Resistance
V
GS
= 10 V, I
D
= 14 A
V
GS
= 4.5 V, I
D
= 12 A
V
DS
= 15 V, I
D
= 10 A
4.6
6.0
m
6.3
8.5
Forward Transconductance
g
FS
13.2
S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
C
ISS
C
OSS
C
RSS
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
R
G
V
GS
= 0 V, f = 1.0 MHz, V
DS
= 24 V
2310
pF
Output Capacitance
460
Reverse Transfer Capacitance
263
Total Gate Charge
V
GS
= 4.5 V, V
DS
= 15 V, I
D
= 12 A
20
30
nC
Threshold Gate Charge
3.0
GatetoSource Charge
6.7
GatetoDrain Charge
8.1
Gate Resistance
0.7
SWITCHING CHARACTERISTICS
(Note 4)
TurnOn Delay Time
t
d(ON)
t
r
t
d(OFF)
t
f
V
GS
= 4.5 V, V
DS
= 15 V,
I
D
= 1.0 A, R
L
= 15 , R
G
= 3.0
20
ns
Rise Time
20
TurnOff Delay Time
30
Fall Time
31
DRAINSOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V, I
S
= 7.0 A
T
J
= 25
°
C
T
J
= 125
°
C
0.75
1.0
V
0.6
Reverse Recovery Time
t
RR
t
a
t
b
Q
RR
2%.
V
GS
= 0 V, dI
S
/dt = 100 A/ s,
I
S
= 7.0 A
28
ns
Charge Time
14
Discharge Time
14
Reverse Recovery Charge
23
nC
3. Pulse Test: Pulse Width
4. Switching characteristics are independent of operating junction temperatures.
300 s, Duty Cycle
相關(guān)PDF資料
PDF描述
NTMFS4744N Power MOSFET 30V, 53A, Single N(53A, 30V功率MOSFET)
NTMFS4839N Power MOSFET(功率MOSFET)
NTMFS4838N Power MOSFET(功率MOSFET)
NTMFS4841N Power MOSFET 30 V, 57 A(30V, 57A, 功率MOSFET)
NTMS4704N Power MOSFET 30V, 12.3A, Single N Channel, SO8(30V, 12.3A，功率MOSFET)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NTMFS4122NT1G 功能描述:MOSFET NFET 23A 30V 4.6MO RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTMFS4122NT3G 功能描述:MOSFET NFET 30V 23A .046R RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTMFS4701N 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 30 V, 20 A, Single N-Channel, SOIC-8 Flat Lead Package
NTMFS4701NT1G 功能描述:MOSFET 30V 20A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTMFS4701NT3G 功能描述:MOSFET 30V 20A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*