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參數(shù)資料
| 型號(hào)： | NTMD4N03R2 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | Power MOSFET 4 Amps, 30 Volts(4A, 30V, 功率MOSFET) |
| 中文描述： | 4 A, 30 V, 0.06 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MINIATURE, CASE 751-07, SOIC-8 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 156K |
| 代理商： | NTMD4N03R2 |
Semiconductor Components Industries, LLC, 2006
February, 2006
Rev. 2
1
Publication Order Number:
NTMD4N03R2/D
NTMD4N03R2
Power MOSFET
4 Amps, 30 Volts
N
Channel SO
8 Dual
Features
Designed for use in low voltage, high speed switching applications
Ultra Low On
Resistance Provides
Higher Efficiency and Extends Battery Life
R
DS(on)
= 0.048 , V
GS
= 10 V (Typ)
R
DS(on)
= 0.065 , V
GS
= 4.5 V (Typ)
Miniature SO
8 Surface Mount Package
Saves Board Space
Diode is Characterized for Use in Bridge Circuits
Diode Exhibits High Speed, with Soft Recovery
Pb
Free Package is Available
Applications
DC
DC Converters
Computers
Printers
Cellular and Cordless Phones
Disk Drives and Tape Drives
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain
to
Source Voltage
Gate
to
Source Voltage
Continuous
Drain Current
Continuous @ T
A
= 25
°
C
Single Pulse (tp
≤
10 s)
Total Power Dissipation
@ T
A
= 25
°
C (Note 1)
Operating and Storage
Temperature Range
V
DSS
V
GS
30
20
V
V
I
D
I
DM
P
D
4.0
12
2.0
Adc
Apk
W
T
J
, T
stg
55 to
+150
°
C
Single Pulse Drain
to
Source
Avalanche Energy
Starting T
J
= 25
°
C
(V
DD
= 25 Vdc, V
GS
= 5.0 Vdc,
Peak I
L
= 4.45 Apk, L = 8 mH,
R
G
= 25 )
Thermal Resistance
Junction
to
Ambient (Note 1)
E
AS
80
mJ
R
JA
62.5
°
C/W
Maximum Lead Temperature for
Soldering Purposes for 10 seconds
T
L
260
°
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. When surface mounted to an FR4 board using 1
″
pad size, t
≤
10 s
N
Channel
http://onsemi.com
V
DSS
R
DS(ON)
Typ
I
D
Max
30 V
48 m @ V
GS
= 10 V
4.0 A
SOIC
8
SUFFIX NB
CASE 751
STYLE 11
MARKING DIAGRAM
*
AND PIN ASSIGNMENT
E4N03 = Specific Device Code
A
= Assembly Location
Y
= Year
WW
= Work Week
= Pb
Free Package
(Note: Microdot may be in either location)
E4N03
AYWW
1
8
1
8
S1 G1 S2 G2
D1 D1 D2 D2
*For additional marking information, refer to
Application Note AND8002/D.
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D
Device
Package
Shipping
ORDERING INFORMATION
NTMD4N03R2
SOIC
8
2500/Tape & Reel
NTMD4N03R2G
SOIC
8
(Pb
Free)
2500/Tape & Reel
D
S
G
D
S
G
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| NTMD4N03R2G | 功能描述:MOSFET 30V 4A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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