參數(shù)資料
型號： NTMD6N02R2
廠商： ON SEMICONDUCTOR
元件分類： JFETs
英文描述： Power MOSFET 6.0 Amps, 20 Volts
中文描述： 3.92 A, 20 V, 0.035 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封裝： CASE 751-07, SO-8
文件頁數(shù)： 1/6頁
文件大小： 71K
代理商： NTMD6N02R2
Semiconductor Components Industries, LLC, 2004
April, 2004 Rev. 2
1
Publication Order Number:
NTMD6N02R2/D
NTMD6N02R2
Power MOSFET
6.0 Amps, 20 Volts
NChannel Enhancement Mode
Dual SO8 Package
Features
Ultra Low R
DS(on)
Higher Efficiency Extending Battery Life
Logic Level Gate Drive
Miniature Dual SO8 Surface Mount Package
Diode Exhibits High Speed, Soft Recovery
Avalanche Energy Specified
SO8 Mounting Information Provided
Applications
DCDC Converters
Low Voltage Motor Control
Power Management in Portable and BatteryPowered Products, for
example, Computers, Printers, Cellular and Cordless Telephones and
PCMCIA Cards
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
DraintoSource Voltage
V
DSS
20
V
DraintoGate Voltage (R
GS
= 1.0 M )
V
DGR
20
V
GatetoSource Voltage Continuous
V
GS
12
V
Thermal Resistance
JunctiontoAmbient (Note 1)
Total Power Dissipation @ T
A
= 25
°
C
Continuous Drain Current @ T
A
= 25
°
C
Continuous Drain Current @ T
A
= 70
°
C
Pulsed Drain Current (Note 4)
R
θ
JA
P
D
I
D
I
D
I
DM
62.5
2.0
6.5
5.5
50
°
C/W
W
A
A
A
Thermal Resistance
JunctiontoAmbient (Note 2)
Total Power Dissipation @ T
A
= 25
°
C
Continuous Drain Current @ T
A
= 25
°
C
Continuous Drain Current @ T
A
= 70
°
C
Pulsed Drain Current (Note 4)
R
θ
JA
P
D
I
D
I
D
I
DM
102
1.22
5.07
4.07
40
°
C/W
W
A
A
A
Thermal Resistance
JunctiontoAmbient (Note 3)
Total Power Dissipation @ T
A
= 25
°
C
Continuous Drain Current @ T
A
= 25
°
C
Continuous Drain Current @ T
A
= 70
°
C
Pulsed Drain Current (Note 4)
R
θ
JA
P
D
I
D
I
D
I
DM
172
0.73
3.92
3.14
30
°
C/W
W
A
A
A
1. Mounted onto a 2
″
square FR4 Board
(1
″
sq. 2 oz. Cu 0.06
″
thick single sided), t < 10 seconds.
2. Mounted onto a 2
″
square FR4 Board
(1
″
sq. 2 oz. Cu 0.06
″
thick single sided), t = steady state.
3. Minimum FR4 or G10 PCB, t = steady state.
4. Pulse Test: Pulse Width = 10 s, Duty Cycle = 2%.
Device
Package
Shipping
ORDERING INFORMATION
NTMD6N02R2
SO8
2500/Tape & Reel
NChannel
D
S
G
MARKING DIAGRAM
& PIN ASSIGNMENT
E6N02
LYWW
E6N02 = Device Code
L
= Assembly Location
Y
= Year
WW
= Work Week
Source 1
Gate 1
Source 2
Gate 2
Drain 1
Drain 1
Drain 2
Drain 2
(Top View)
2
3
4
1
7
6
5
8
http://onsemi.com
V
DSS
R
DS(ON)
TYP
I
D
MAX
20 V
35 m
@ V
GS
= 4.5 V
6.0 A
SO8
CASE 751
STYLE 11
1
8
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NTMD6N02R2/D 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Power MOSFET 6.0 Amps， 20 Volts
NTMD6N02R2_05 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 6.0 Amps, 20 Volts
NTMD6N02R2G 功能描述:MOSFET NFET 20V 0.035R TR RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTMD6N03R2 功能描述:MOSFET 30V 6A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTMD6N03R2G 功能描述:MOSFET NFET 30V SPCL TR RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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