參數(shù)資料
型號(hào)： NTLJD4116N
廠商： ON SEMICONDUCTOR
英文描述： Power MOSFET(功率MOSFET)
中文描述： 功率MOSFET（功率MOSFET的）
文件頁(yè)數(shù)： 3/7頁(yè)
文件大小： 80K
代理商： NTLJD4116N
NTLJD4116N
http://onsemi.com
3
MOSFET ELECTRICAL CHARACTERISTICS
(T
J
= 25
°
C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
V
(BR)DSS
V
(BR)DSS
/T
J
V
GS
= 0 V, I
D
= 250 A
I
D
= 250 A, Ref to 25
°
C
30
V
DraintoSource Breakdown Voltage
Temperature Coefficient
18.1
mV/
°
C
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 24 V, V
GS
= 0 V
T
J
= 25
°
C
T
J
= 85
°
C
1.0
A
10
GatetoSource Leakage Current
I
GSS
V
DS
= 0 V, V
GS
=
±
8.0 V
100
nA
ON CHARACTERISTICS
(Note 5)
Gate Threshold Voltage
V
GS(TH)
V
GS(TH)
/T
J
V
GS
= V
DS
, I
D
= 250 A
0.4
0.7
1.0
V
Negative Gate Threshold
Temperature Coefficient
2.8
mV/
°
C
DraintoSource OnResistance
R
DS(on)
V
GS
= 4.5, I
D
= 2.0 A
V
GS
= 2.5, I
D
= 2.0 A
V
GS
= 1.8, I
D
= 1.8 A
V
GS
= 1.5, I
D
= 1.5 A
V
DS
= 5.0 V, I
D
= 2.0 A
47
70
m
56
90
88
125
133
250
Forward Transconductance
g
FS
4.5
S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
C
ISS
C
OSS
C
RSS
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
R
G
V
GS
= 0 V, f = 1.0 MHz,
V
DS
= 15 V
427
pF
Output Capacitance
51
Reverse Transfer Capacitance
32
Total Gate Charge
V
GS
= 4.5 V, V
= 15 V,
I
D
= 2.0 A
5.4
6.5
nC
Threshold Gate Charge
0.5
GatetoSource Charge
0.8
GatetoDrain Charge
1.24
Gate Resistance
0.37
SWITCHING CHARACTERISTICS
(Note 6)
TurnOn Delay Time
t
d(ON)
t
r
t
d(OFF)
t
f
V
GS
= 4.5 V, V
DD
= 15 V,
I
D
= 2.0 A, R
G
= 2.0
4.8
ns
Rise Time
11.8
TurnOff Delay Time
14.2
Fall Time
1.7
DRAINSOURCE DIODE CHARACTERISTICS
Forward Recovery Voltage
V
SD
V
GS
= 0 V, IS = 2.0 A
T
J
= 25
°
C
T
J
= 125
°
C
0.78
1.2
V
0.62
Reverse Recovery Time
t
RR
t
a
t
b
Q
RR
V
GS
= 0 V, d
ISD
/d
t
= 100 A/ s,
I
S
= 2.0 A
10.5
ns
Charge Time
7.6
Discharge Time
2.9
Reverse Recovery Time
5.0
nC
5. Pulse Test: Pulse Width
6. Switching characteristics are independent of operating junction temperatures.
300 s, Duty Cycle
2%.
相關(guān)PDF資料
PDF描述
NTLJF4156N Power MOSFET and Schottky Diode(功率MOSFET和肖特基二極管)
NTMD2C02R2 Power MOSFET 2 Amps, 20 Volts
NTMFS4122N 30V,23A,Single N Channel,SO 8 Flat Lead Power MOSFET(30V,23A,N溝道功率MOSFET)
NTMFS4744N Power MOSFET 30V, 53A, Single N(53A, 30V功率MOSFET)
NTMFS4839N Power MOSFET(功率MOSFET)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NTLJD4116NT1G 功能描述:MOSFET NFET 2X2 30V 4.6A 70MOHM RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTLJD4150P 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET -30 V, -3.4 A, uCool TM Dual P-Channel,2x2 mm WDFN Package
NTLJD4150P_07 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET -30 V, -3.4 A, uCool TM Dual P-Channel,2x2 mm WDFN Package
NTLJD4150PTBG 功能描述:MOSFET P-CH DUAL 30V 3.2A 6WDFN RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 陣列 系列:- 產(chǎn)品目錄繪圖:8-SOIC Mosfet Package 標(biāo)準(zhǔn)包裝:1 系列:- FET 型:2 個(gè) N 溝道（雙） FET 特點(diǎn):邏輯電平門(mén) 漏極至源極電壓(Vdss):60V 電流 - 連續(xù)漏極(Id) @ 25° C:3A 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C:75 毫歐 @ 4.6A，10V Id 時(shí)的 Vgs(th)（最大）:3V @ 250µA 閘電荷(Qg) @ Vgs:20nC @ 10V 輸入電容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安裝類型:表面貼裝 封裝/外殼:PowerPAK? SO-8 供應(yīng)商設(shè)備封裝:PowerPAK? SO-8 包裝:Digi-Reel® 產(chǎn)品目錄頁(yè)面:1664 (CN2011-ZH PDF) 其它名稱:SI7948DP-T1-GE3DKR
NTLJF117P 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:High Efficiency DC-DC Converters
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*