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參數資料
| 型號： | NTK3142P |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | MOSFETs |
| 英文描述： | 30V N-Channel PowerTrench MOSFET |
| 中文描述： | 30V的N溝道的PowerTrench MOSFET的 |
| 文件頁數： | 2/5頁 |
| 文件大?。?/td> | 55K |
| 代理商： | NTK3142P |
NTK3142P
http://onsemi.com
2
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Max
Unit
JunctiontoAmbient – Steady State (Note 3)
R
JA
315
°
C/W
JunctiontoAmbient – t = 5 s (Note 3)
R
JA
250
JunctiontoAmbient – Steady State Minimum Pad (Note 4)
R
JA
440
3. Surfacemounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces)
4. Surfacemounted on FR4 board using the minimum recommended pad size.
MOSFET ELECTRICAL CHARACTERISTICS
(T
J
= 25
°
C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
V
(BR)DSS
V
(BR)DSS
/T
J
V
GS
= 0 V, I
D
= 100 A
I
D
= 100 A, Reference to 25
°
C
20
V
DraintoSource Breakdown Voltage
Temperature Coefficient
14
mV/
°
C
Zero Gate Voltage Drain Current
I
DSS
V
GS
= 0 V,
V
DS
= 16 V
T
J
= 25
°
C
T
J
= 125
°
C
1
A
20
GatetoSource Leakage Current
I
GSS
V
DS
= 0 V, V
GS
=
±
5 V
1
A
ON CHARACTERISTICS
(Note 5)
Gate Threshold Voltage
V
GS(TH)
V
GS(TH)
/T
J
V
GS
= V
DS
, I
D
= 250 A
0.4
1.3
V
Gate Threshold Temperature
Coefficient
2.0
mV/
°
C
DraintoSource On Resistance
R
DS(ON)
R
DS(ON)
V
GS
= 4.5V, I
D
= 260 mA
V
GS
= 4.5V, I
D
= 10 mA
V
GS
= 2.5 V, I
D
= 1 mA
V
GS
= 1.8 V, I
D
= 1 mA
V
DS
= 5 V, I
D
= 10 mA
2.9
4.0
DraintoSource On Resistance
2.7
3.4
4.1
5.3
6.1
10
Forward Transconductance
g
FS
73
mS
CAPACITANCES
Input Capacitance
C
ISS
C
OSS
C
RSS
V
GS
= 0 V, f = 1 MHz, V
DS
= 10 V
15.3
pF
Output Capacitance
4.3
Reverse Transfer Capacitance
2.3
SWITCHING CHARACTERISTICS, V
GS
= 4.5 V
(Note 6)
TurnOn Delay Time
t
d(ON)
t
r
t
d(OFF)
t
f
V
GS
= 4.5 V, V
DD
= 5 V, I
D
= 100 mA,
R
G
= 6
8.4
16
ns
Rise Time
15.3
28
TurnOff Delay Time
37.5
80
Fall Time
22.7
43
DRAINSOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V, I
S
= 10 mA
T
J
= 25
°
C
T
J
= 125
°
C
0.69
1.2
V
0.56
Reverse Recovery Time
t
RR
t
a
t
b
Q
RR
V
GS
= 0 V, V
DD
= 20 V,
dI
SD
/dt = 100 A/ s, I
S
= 1.0 A
37
80
ns
Charge Time
15.9
30
Discharge Time
21.1
50
Reverse Recovery Charge
20
70
nC
5. Pulse Test: pulse width
6. Switching characteristics are independent of operating junction temperatures.
300 s, duty cycle
2%.
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