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參數(shù)資料
| 型號(hào)： | NTJS4405N |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | Small Signal MOSFET 25 V, 1.2 A(25V, 1.2A, 小信號(hào)MOSFET) |
| 中文描述： | 小信號(hào)MOSFET 25五，1.2（25V的，1.2A電流，小信號(hào)MOSFET的） |
| 文件頁數(shù)： | 3/5頁 |
| 文件大?。?/td> | 131K |
| 代理商： | NTJS4405N |
NTJS4405N
http://onsemi.com
3
TYPICAL PERFORMANCE CURVES
(T
J
= 25
°
C unless otherwise noted)
0
5
1
3
1
V
DS
, DRAIN
TO
SOURCE VOLTAGE (VOLTS)
I
D
D
2.5
0.5
0
Figure 1. On
Region Characteristics
0.5
2
2
1
2.5
1.5
1
0
0
Figure 2. Transfer Characteristics
V
GS
, GATE
TO
SOURCE VOLTAGE (VOLTS)
0.4
0.2
0
Figure 3. On
Resistance vs. Drain Current and
Temperature
I
D,
DRAIN CURRENT (AMPS)
R
D
D
T
S
I
D
D
Figure 4. On
Resistance vs. Drain Current and
Gate Voltage
50
0
25
25
1.4
1.2
1
0.8
0.6
50
125
100
Figure 5. On
Resistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (
°
C)
T
J
= 25
°
C
1.0
1.0
2.0
T
J
=
55
°
C
T
J
= 125
°
C
75
150
I
D
= 0.6 A
V
GS
= 4.5 V
R
D
D
T
S
R
2
25
°
C
0
5.0
Figure 6. Drain
to
Source Leakage Current
vs. Voltage
3.5 V
7 V
6 V
5.5 V
4.5 V
5
4
V
DS
≥
5 V
0.6
V
GS
= 2 V
1.5
3.5
4.5
0.5
1.5
T
J
= 125
°
C
4.0
3.0
V
GS
= 4.5 V
T
J
=
55
°
C
T
J
= 25
°
C
0.1
0.4
1
0.3
0.2
I
D,
DRAIN CURRENT (AMPS)
R
D
D
T
S
0.2
0.6
2
1.4
0.4
1.2
0.8
V
GS
= 2.7 V
T
J
= 25
°
C
0.8
1.8
1.6
1.6
1.8
V
GS
= 4.5 V
1
5
1000
I
D
10
V
DS
, DRAIN
TO
SOURCE VOLTAGE (VOLTS)
0
25
15
10000
10
V
GS
= 0 V
T
J
= 125
°
C
20
100
T
J
= 150
°
C
2
3
4
0.5
3.5
1.5
2.5
4.5
V
GS
= 2.5 V
V
GS
= 3 V
4 V
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