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參數(shù)資料
| 型號： | NTJS4405N |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | Small Signal MOSFET 25 V, 1.2 A(25V, 1.2A, 小信號MOSFET) |
| 中文描述： | 小信號MOSFET 25五，1.2（25V的，1.2A電流，小信號MOSFET的） |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 131K |
| 代理商： | NTJS4405N |
NTJS4405N
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
J
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain
to
Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250 A
25
V
Drain
to
Source Breakdown Voltage
Temperature Coefficient
V
(BR)DSS
/T
J
30
mV/
°
C
Zero Gate Voltage Drain Current
I
DSS
V
GS
= 0 V,
V
DS
= 20
V
T
J
= 25
°
C
T
J
= 125
°
C
1.0
A
10
Gate
to
Source Leakage Current
I
GSS
V
DS
= 0 V, V
GS
= 8.0 V
100
nA
ON CHARACTERISTICS
(Note 2)
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250 A
0.65
1.5
V
Negative Threshold Temperature
Coefficient
V
GS(TH)
/T
J
2.0
mV/
°
C
Drain
to
Source On Resistance
R
DS(on)
V
GS
= 4.5
V, I
D
= 0.6
A
249
350
m
V
GS
= 2.7
V, I
D
= 0.2
A
299
400
V
GS
= 4.5
V, I
D
= 1.2
A
260
Forward Transconductance
g
FS
V
DS
= 5.0
V, I
D
= 0.5
A
0.5
S
CHARGES AND CAPACITANCES
Input Capacitance
C
ISS
V
GS
= 0 V, f = 1.0 MHz,
V
DS
= 10
V
49
60
pF
Output Capacitance
C
OSS
22.4
30
Reverse Transfer Capacitance
C
RSS
8.0
12
Total Gate Charge
Q
G(TOT)
V
GS
= 4.5 V, V
DS
= 5.0
V,
I
D
= 0.95
A
0.75
1.5
nC
Threshold Gate Charge
Q
G(TH)
0.10
Gate
to
Source Charge
Q
GS
0.30
0.50
Gate
to
Drain Charge
Q
GD
0.20
0.40
SWITCHING CHARACTERISTICS
(Note 3)
Turn
On Delay Time
t
d(ON)
V
GS
= 4.5
V, V
DS
= 6.0
V,
D
= 0.5
A, R
G
= 50
6.0
12
ns
Rise Time
t
r
4.7
8.0
Turn
Off Delay Time
t
d(OFF)
25
35
Fall Time
t
f
41
60
DRAIN
SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V,
I
S
= 0.6 A
T
J
= 25
°
C
0.82
1.20
V
2. Pulse Test: pulse width
3. Switching characteristics are independent of operating junction temperatures.
300 s, duty cycle
2%.
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