- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄361164 > NTHS5445T1 (ON SEMICONDUCTOR) Power MOSFET P-Channel 5.2 A, 8 V(5.2A，8V，P通道的功率MOSFET) PDF資料下載
參數(shù)資料
| 型號： | NTHS5445T1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Power MOSFET P-Channel 5.2 A, 8 V(5.2A，8V，P通道的功率MOSFET) |
| 中文描述： | 5200 mA, 8 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | CASE 1206A-01, CHIPFET-8 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 50K |
| 代理商： | NTHS5445T1 |
NTHS5445T1
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Typ
Max
Unit
Maximum Junction–to–Ambient (Note 2.)
t
5 sec
Steady State
R
thJA
40
80
50
95
°
C/W
Maximum Junction–to–Foot (Drain)
Steady State
R
thJF
15
20
°
C/W
ELECTRICAL CHARACTERISTICS
(T
J
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= –250
μ
A
–0.45
–
–
V
Gate–Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
8.0 V
–
–
100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= –6.4 V, V
GS
= 0 V
–
–
–1.0
μ
A
V
DS
= –6.4 V, V
GS
= 0 V,
T
J
= 85
°
C
–
–
–5.0
On–State Drain Current (Note 3.)
I
D(on)
V
DS
–5.0 V, V
GS
= –4.5 V
–20
–
–
A
Drain–Source On–State Resistance (Note 3.)
r
DS(on)
V
GS
= –4.5 V, I
D
= –5.2 A
–
0.030
0.035
V
GS
= –2.5 V, I
D
= –4.5 A
–
0.040
0.047
V
GS
= –1.8 V, I
D
= –2.0 A
–
0.052
0.062
Forward Transconductance (Note 3.)
g
fs
V
DS
= –5.0 V, I
D
= –5.2 A
–
18
–
S
Diode Forward Voltage (Note 3.)
V
SD
I
S
= –1.1 A, V
GS
= 0 V
–
–0.8
–1.2
V
Dynamic
(Note 4.)
Total Gate Charge
Q
g
V
DS
= –4.0 V, V
GS
= –4.5 V,
I
D
= –5.2 A
4 0 V V
4 5 V
–
17
26
nC
Gate–Source Charge
Q
gs
–
2.8
–
Gate–Drain Charge
Q
gd
–
2.6
–
Turn–On Delay Time
t
d(on)
–
15
25
ns
Rise Time
t
r
V
DD
= –4.0 V, R
L
= 4
–1 0 A V
= –4 5 V
–1.0 A, V
GEN
= –4.5 V,
= 6
R
G
6
I
D
–
45
70
Turn–Off Delay Time
t
d(off)
–
110
165
Fall Time
t
f
–
65
100
Source–Drain Reverse Recovery Time
2. Surface Mounted on 1
″
x 1
″
FR4 Board.
3. Pulse Test: Pulse Width
4. Guaranteed by design, not subject to production testing.
t
rr
I
F
= –1.1 A, di/dt = 100 A/
μ
s
–
30
60
300
μ
s, Duty Cycle
2%.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NTJD4001NT1 | Small Signal MOSFET |
| NTJD4001NT1G | Small Signal MOSFET |
| NTJD4001N | Small Signal MOSFET 30 V, 250 mA(30V, 250mA, 小信號MOSFET) |
| NTJS4405N | Small Signal MOSFET 25 V, 1.2 A(25V, 1.2A, 小信號MOSFET) |
| NTK3134N | Power MOSFET(功率MOSFET) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NTHS5445T1/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Power MOSFET P-Channel ChipFET? |
| NTHS75680RJ | 制造商:MACOM 制造商全稱:Tyco Electronics 功能描述:Aluminium Housed Power Resistors |
| NTI02B0N1TRF | 制造商:NIC Components Corp 功能描述:- Tape and Reel |
| NTI02B0N2TRF | 制造商:NIC Components Corp 功能描述:- Tape and Reel |
| NTI02B0N3TRF | 制造商:NIC Components Corp 功能描述:- Tape and Reel |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。