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參數(shù)資料
| 型號(hào)： | NTHS5404T1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | Power MOSFET |
| 中文描述： | 5200 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | CASE 1206A-03, CHIPFET-8 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大小： | 57K |
| 代理商： | NTHS5404T1 |
NTHS5404
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Typ
Max
Unit
Maximum JunctiontoAmbient (Note 2)
t
5 sec
Steady State
R
JA
40
80
50
95
°
C/W
Maximum JunctiontoFoot (Drain)
Steady State
R
JF
15
20
°
C/W
ELECTRICAL CHARACTERISTICS
(T
J
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 A
0.6
V
GateBody Leakage
I
GSS
V
DS
= 0 V, V
GS
=
12 V
100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 16 V, V
GS
= 0 V
1.0
A
V
DS
= 16 V, V
GS
= 0 V,
T
J
= 85
C
5.0
OnState Drain Current (Note 3)
I
D(on)
V
DS
5.0 V, V
GS
= 4.5 V
20
A
DrainSource OnState Resistance (Note 3)
r
DS(on)
V
GS
= 4.5 V, I
D
= 5.2 A
0.025
0.030
V
GS
= 2.5 V, I
D
= 4.3 A
0.038
0.045
Forward Transconductance (Note 3)
g
fs
V
DS
= 10 V, I
D
= 5.2 A
20
S
Diode Forward Voltage (Note 3)
V
SD
I
S
= 5.2 A, V
GS
= 0 V
0.8
1.2
V
Dynamic
(Note 4)
Total Gate Charge
Q
G
12
18
nC
GateSource Charge
Q
GS
V
DS
= 10 V, V
= 4.5 V,
I
D
= 5.2 A
2.4
GateDrain Charge
Q
GD
3.2
TurnOn Delay Time
t
d(on)
20
30
ns
Rise Time
t
r
V
DD
= 10 V, R
L
= 10
1 0 A V
= 4 5 V
I
D
1.0 A, V
GEN
= 4.5 V,
R
= 6
G
40
60
TurnOff Delay Time
t
d(off)
40
60
Fall Time
t
f
15
23
SourceDrain Reverse Recovery Time
t
rr
I
F
= 1.1 A, di/dt = 100 A/ s
30
60
2. Surface Mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces).
3. Pulse Test: Pulse Width
300 s, Duty Cycle
4. Guaranteed by design, not subject to production testing.
2%.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NTHS5404T1/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Power MOSFET N-Channel ChipFET? |
| NTHS5404T1G | 功能描述:MOSFET 20V 7.2A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTHS5404T1G | 制造商:ON Semiconductor 功能描述:MOSFET |
| NTHS5441 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:−20 V, −5.3 A, P−Channel ChipFET |
| NTHS5441PT1G | 功能描述:MOSFET CHIPFETS 20V .055 TR PFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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