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參數(shù)資料
| 型號(hào)： | NTHD5904T1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | Power MOSFET Dual N-Channel |
| 中文描述： | 3100 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | CHIPFET-8 |
| 文件頁數(shù)： | 8/8頁 |
| 文件大?。?/td> | 51K |
| 代理商： | NTHD5904T1 |
NTHD5904T1
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NTHD5904T1/D
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| NTHS5404T1G | Power MOSFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NTHD5904T1/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Power MOSFET Dual N-Channel |
| NTHD5905T1 | 功能描述:MOSFET 2P-CH 8V 3A CHIPFET RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 陣列 系列:- 產(chǎn)品目錄繪圖:8-SOIC Mosfet Package 標(biāo)準(zhǔn)包裝:1 系列:- FET 型:2 個(gè) N 溝道（雙） FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):60V 電流 - 連續(xù)漏極(Id) @ 25° C:3A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:75 毫歐 @ 4.6A，10V Id 時(shí)的 Vgs(th)（最大）:3V @ 250µA 閘電荷(Qg) @ Vgs:20nC @ 10V 輸入電容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安裝類型:表面貼裝 封裝/外殼:PowerPAK? SO-8 供應(yīng)商設(shè)備封裝:PowerPAK? SO-8 包裝:Digi-Reel® 產(chǎn)品目錄頁面:1664 (CN2011-ZH PDF) 其它名稱:SI7948DP-T1-GE3DKR |
| NTHD5905T1/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Power MOSFET Dual P-Channel ChipFET |
| NT-HOLSTER | 制造商:Fluke Networks 功能描述:HOLSTER |
| NTHS | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:NTC Thermistors, Surface Mount Chip |
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