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參數(shù)資料
| 型號(hào)： | NTHD5904T1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | Power MOSFET Dual N-Channel |
| 中文描述： | 3100 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | CHIPFET-8 |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大?。?/td> | 51K |
| 代理商： | NTHD5904T1 |
NTHD5904T1
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Typ
Max
Unit
Maximum Junction–to–Ambient (Note 2)
t
5 sec
Steady State
R
thJA
50
90
60
110
°
C/W
Maximum Junction–to–Foot (Drain)
Steady State
R
thJF
30
40
°
C/W
ELECTRICAL CHARACTERISTICS
(T
J
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 A
0.6
–
–
V
Gate–Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
12 V
–
–
100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 16 V, V
GS
= 0 V
–
–
1.0
A
V
DS
= 16 V, V
GS
= 0 V,
T
J
= 85
°
C
–
–
5.0
On–State Drain Current (Note 3)
I
D(on)
V
DS
5.0 V, V
GS
= 4.5 V
10
–
–
A
Drain–Source On–State Resistance (Note 3)
r
DS(on)
V
GS
= 4.5 V, I
D
= 3.1 A
–
0.065
0.075
V
GS
= 2.5 V, I
D
= 2.3 A
–
0.115
0.143
Forward Transconductance (Note 3)
g
fs
V
DS
= 10 V, I
D
= 3.1 A
–
8.0
–
S
Diode Forward Voltage (Note 3)
V
SD
I
S
= 0.9 A, V
GS
= 0 V
–
0.8
1.2
V
Dynamic
(Note 4)
Total Gate Charge
Q
g
V
DS
= 10 V, V
GS
= 4.5 V,
I
D
= 3.1 A
10 V V
4 5 V
–
4.0
6.0
nC
Gate–Source Charge
Q
gs
–
0.6
–
Gate–Drain Charge
Q
gd
–
1.3
–
Turn–On Delay Time
t
d(on)
–
12
18
ns
Rise Time
t
r
V
DD
= 10 V, R
L
= 10
1 0 A V
= 4 5 V
I
D
1.0 A, V
GEN
= 4.5 V,
= 6
R
G
6
–
35
55
Turn–Off Delay Time
t
d(off)
–
19
30
Fall Time
t
f
–
9.0
15
Source–Drain Reverse Recovery Time
2. Surface Mounted on 1
″
x 1
″
FR4 Board.
3. Pulse Test: Pulse Width
t
rr
I
F
= 0.9 A, di/dt = 100 A/ s
–
40
80
300 s, Duty Cycle
2%.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NTHD5904T1/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Power MOSFET Dual N-Channel |
| NTHD5905T1 | 功能描述:MOSFET 2P-CH 8V 3A CHIPFET RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 陣列 系列:- 產(chǎn)品目錄繪圖:8-SOIC Mosfet Package 標(biāo)準(zhǔn)包裝:1 系列:- FET 型:2 個(gè) N 溝道（雙） FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):60V 電流 - 連續(xù)漏極(Id) @ 25° C:3A 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C:75 毫歐 @ 4.6A，10V Id 時(shí)的 Vgs(th)（最大）:3V @ 250µA 閘電荷(Qg) @ Vgs:20nC @ 10V 輸入電容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安裝類型:表面貼裝 封裝/外殼:PowerPAK? SO-8 供應(yīng)商設(shè)備封裝:PowerPAK? SO-8 包裝:Digi-Reel® 產(chǎn)品目錄頁(yè)面:1664 (CN2011-ZH PDF) 其它名稱:SI7948DP-T1-GE3DKR |
| NTHD5905T1/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Power MOSFET Dual P-Channel ChipFET |
| NT-HOLSTER | 制造商:Fluke Networks 功能描述:HOLSTER |
| NTHS | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:NTC Thermistors, Surface Mount Chip |
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