- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄363696 > NTE483 (NTE Electronics, Inc.) Silicon NPN Transistor RF Power Output for Mobile Use, PO = 18W @ 866MHz PDF資料下載
參數(shù)資料
| 型號： | NTE483 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Silicon NPN Transistor RF Power Output for Mobile Use, PO = 18W @ 866MHz |
| 中文描述： | 硅NPN晶體管輸出功率為移動使用，保\u003d 18W @ 866MHz |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 22K |
| 代理商： | NTE483 |
NTE483
Silicon NPN Transistor
RF Power Output for Mobile Use,
P
O
= 18W @ 866MHz
Description:
The NTE483 is a 12.5 Volt epitaxial silicon NPN planer transistor designed for primarily for 800MHz
mobile communications. This device utilizes matched input technology (Tuned Q) to increase band-
width and power gain over the complete range of 806–866MHz.
Features:
Designed for 806–866MHz Mobile Equipment
18W Min., with Greater than 6dB Gain at 836MHz
Withstands 10:1 VSWR at Rated Operating Conditions
Matched Input Technology
Common Base
Absolute Maximum Ratings:
(T
C
= +25
°
C unless othrwise specified)
Collector–Base Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (At +25
°
C), P
tot
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction–to–Case, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
36V
16V
4V
7A
46W
+200
°
C
–65
°
to +150
°
C
3.8
°
C/W
Electrical Characteristic:
(T
C
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Static
Collector–Emitter Breakdown Voltage
V
(BR)CEO
V
(BR)CES
V
(BR)EBO
I
CES
h
FE
I
C
= 50mA, I
B
= 0, Note 1
I
C
= 50mA, V
BE
= 0, Note 1
I
E
= 10mA, i
C
= 0
V
CE
= 15V, V
BE
= 0
V
CE
= 6V, I
C
= 1A
16
–
–
V
36
–
–
V
Emitter–Base Breakdown Voltage
4
–
–
V
Collector Cutoff Current
–
–
10
mA
DC Current Gain
20
–
–
Note 1. Pulsed through 25mH indicator.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NTE484 | Silicon NPN Transistor RF Power Output for Mobile Use, PO = 25W @ 947MHz |
| NTE486 | Silicon NPN Transistor RF High Frequency Amplifier |
| NTE488 | Silicon NPN Transistor RF Power Output |
| NTE489 | Silicon P-Channel JFET Transistor General Purpose AF Amplifier |
| NTE48 | Silicon NPN Transistor Darlington, General Purpose Amplifier, High Current |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NTE484 | 制造商:NTE 制造商全稱:NTE Electronics 功能描述:Silicon NPN Transistor RF Power Output for Mobile Use, PO = 25W @ 947MHz |
| NTE4840 | 制造商:NTE Electronics 功能描述:DIODE SURGE CLAMPING UNIDIRECTIONAL 5000W VR=24V |
| NTE4846 | 制造商:NTE Electronics 功能描述:DIODE SURGE CLAMPING UNIDIRECTIONAL 5000W VR=30V |
| NTE4848 | 制造商:NTE Electronics 功能描述:DIODE SURGE CLAMPING UNIDIRECTIONAL 5000W VR=33V |
| NTE485 | 制造商:NTE Electronics 功能描述:Trans GP BJT NPN 18V 7.5A 6-Pin |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。