參數(shù)資料
型號： NTE457
廠商： NTE Electronics, Inc.
英文描述： Silicon N-Channel JFET Transistor General Purpose Amp, Switch
中文描述： 硅N溝道場效應(yīng)晶體管通用放大器，開關(guān)
文件頁數(shù)： 1/2頁
文件大?。?/td> 20K
代理商： NTE457
NTE457
Silicon N–Channel JFET Transistor
General Purpose Amp, Switch
Absolute Maximum Ratings:
Drain–Source Voltage, V
DS
Drain–Gate Voltage, V
DG
Reverse Gate–Source Voltage, V
GSR
Gate Current, I
G
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (T
A
= +25
°
C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
25V
25V
–25V
10mA
310mW
2.82mW/
°
C
+125
°
C
–65
°
to +150
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics:
(T
A
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
Gate–Source Breakdown Voltage
V
(BR)GS
S
I
GSS
I
G
= –10
μ
A, V
DS
= 0
–25
–
–
V
Gate Reverse Current
V
GS
= 15V, V
DS
= 0
V
GS
= 15V, V
DS
= 0, T
A
= +100
°
C
V
DS
= 15V, I
D
= 10nA
V
DS
= 15V, I
D
= 100
μ
A
–
–
–1
mA
–
–
–200
mA
Gate–Source Cutoff Voltage
V
GS(off)
V
GS
–0.5
–
–6.0
V
Gate–Source Voltage
–
–
–2.5
V
ON Characteristics
Zero–Gate Voltage Drain Current
I
DSS
V
DS
= 15V, V
GS
= 0, Note 1
1
3
5
mA
Small–Signal Characteristics
Forward Transfer Admittance
Common Source
|y
fs
|
V
DS
= 15V, V
GS
= 0, f = 1kHz,
Note 1
1000
–
5000
μ
mhos
Output Admittance Common Source
|y
os
|
V
DS
= 15V, V
GS
= 0, f = 1kHz,
Note 1
–
10
50
μ
mhos
Input Capacitance
C
iss
C
rss
V
DS
= 15V, V
GS
= 0, f = 1kHz
V
DS
= 15V, V
GS
= 0, f = 1kHz
–
4.5
7.0
pF
Reverse Transfer Capacitance
–
1.5
3.0
pF
Note 1. Pulse Test: Pulse Width
≤
630ms, Duty Cycle
≤
10%.
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