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參數(shù)資料
| 型號： | NTE335 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Silicon NPN RF Power Transistor Designed for power amplifier |
| 中文描述： | 硅npn型射頻功率晶體管設計用于功率放大器 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 59K |
| 代理商： | NTE335 |
NTE335 & NTE336
Silicon NPN Transistor
RF Power Output
Description:
The NTE335 and NTE336 are silicon NPN RF power transistors designed for power amplifier applications
in industrial, commercial and amateur radio equipment to 30MHz.
Features:
Specified 12.5V, 30MHz Characteristics:
Output Power =
Minimum Gain =
Efficiency
Available in Two Different Package Designs:
NTE335 (W52N, Flange Mount)
NTE336 (T93D, Stud Mount)
80W
12dB
50%
=
Absolute Maximum Ratings:
Collector
Emitter Voltage, V
CEO
Collector
Base Voltage, V
CBO
Emitter
Base Voltage, V
EBO
Continuous Collector Current, I
C
Total Device Dissipation (T
C
= +25
°
C), P
D
Derate above 25
°
C
Storage Temperature Range, T
stg
Thermal Resistance, Junction
to
Case, R
thJC
25V
45V
4V
20A
250W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.43W/
°
C
65
°
to +150
°
C
0.7
°
C/W
Electrical Characteristics:
(T
C
= +25
°
C unless otherwise specified)
Parameter
OFF Characteristics
Collector
Emitter Breakdown Voltage
Symbol
Test Conditions
Min
Typ
Max
Unit
V
(BR)CEO
I
C
= 100mA, I
B
= 0
V
(BR)CES
I
C
= 50mA, V
BE
= 0
V
(BR)EBO
I
E
= 10mA, I
C
= 0
18
36
4
V
V
V
Emitter
Base Breakdown Voltage
相關PDF資料 |
PDF描述 |
|---|---|
| NTE336 | Silicon NPN RF Power Transistor Designed for power amplifier |
| NTE337 | RESISTOR, METAL STRIP R001 1W 1%RESISTOR, METAL STRIP R001 1W 1%; Resistor element type:Metal Strip; Resistance:0.001R; Case style:2512; Series:ULR; Power rating:1W; Tolerance, +:1%; Tolerance, -:1%; Temp, op. max:170(degree C); |
| NTE338 | MINIATURE POWER RELAY |
| NTE471 | Silicon NPN Transistor RF Power Output PO = 100W @ 30MHz |
| NTE338F | Silicon NPN Transistor RF Power Amp, Driver |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| NTE336 | 制造商:NTE Electronics 功能描述:Trans GP BJT NPN 25V 20A 4-Pin |
| NTE337 | 制造商:NTE Electronics 功能描述:Trans GP BJT NPN 18V 2A 4-Pin Case T-72H |
| NTE338 | 制造商:NTE Electronics 功能描述:Trans GP BJT NPN 24V 3.5A 4-Pin |
| NTE338F | 制造商:NTE 制造商全稱:NTE Electronics 功能描述:Silicon NPN Transistor RF Power Amp, Driver |
| NTE339 | 制造商:NTE Electronics 功能描述:Trans GP BJT NPN 24V 7A 4-Pin |
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