參數(shù)資料
型號： NTE337
廠商： NTE Electronics, Inc.
英文描述： RESISTOR, METAL STRIP R001 1W 1%RESISTOR, METAL STRIP R001 1W 1%; Resistor element type:Metal Strip; Resistance:0.001R; Case style:2512; Series:ULR; Power rating:1W; Tolerance, +:1%; Tolerance, -:1%; Temp, op. max:170(degree C);
中文描述： 硅NPN晶體管射頻功率放大器，驅(qū)動程序
文件頁數(shù)： 1/2頁
文件大小： 22K
代理商： NTE337
NTE337
Silicon NPN Transistor
RF Power Amp, Driver
Description:
The NTE337 is a silicon NPN transistor in a T72H type package designed primarily for use in large–
signal amplifier driver and pre–driver stages. This device is intended for use in industrial communica-
tions equipment operating at frequencies to 80MHz.
Features:
Specified 12.5V, 50MHz Characteristics:
Output Power = 8W
Minimum Gain = 10dB
Efficiency = 50%
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
CEO
Collector–Base Voltage, V
CB
Emitter–Base Voltage, V
EB
Continuous Collector Current, I
C
Total Device Dissipation (T
C
= +25
°
C), P
D
Derate Above 25
°
C
Operating Junction Temperature Range, T
J
Storage Temperature Range, T
stg
18V
36V
4V
2A
20W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
114W/
°
C
–65
°
to +200
°
C
–65
°
to +200
°
C
Electrical Characteristics:
(T
C
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
Collector–Emitter Breakdown Voltage
V
(BR)CEO
V
(BR)CES
V
(BR)EBO
I
CES
I
CBO
I
C
= 200mA, I
B
= 0, Note 1
I
C
= 50mA, V
BE
= 0, Note 1
I
E
= 5mA, I
C
= 0
V
CE
= 15V, V
BE
= 0, T
C
= +125
°
C
V
CB
= 15V, I
E
= 0
18
–
–
V
36
–
–
V
Emitter–Base Breakdown Voltage
4
–
–
V
Collector Cutoff Current
–
–
10
mA
–
–
1
mA
ON Characteristics
DC Current Gain
h
FE
I
C
= 500mA, V
CE
= 5V
5
–
–
Note 1. Pulsed through a 25mH inductor.
Electrical Characteristics (Cont’d):
(T
C
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Dynamic Characteristics
Output Capacitance
C
ob
V
CB
= 15V, I
E
= 0, f = 0.1 to 1MHz
–
–
90
pF
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