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參數(shù)資料
| 型號： | NTE329 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Silicon NPN Transistor RF Power Amp, CB |
| 中文描述： | 硅NPN晶體管射頻功率放大器及CB |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 24K |
| 代理商： | NTE329 |
NTE329
Silicon NPN Transistor
RF Power Amp, CB
Description:
The NTE329 is designed primarily for use in large–signal output amplifier stages. Intended for use
in Citizen–Band communications equipment operating to 30MHz. High breakdown voltages allow a
high percentage of up–modulation in AM circuits.
Features:
Specified 12.5V, 28MHz Characteristic:
Power Output = 3.5W
Power Gain
Efficiency
= 10dB
= 70% Typical
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
CEO
Collector–Base Voltage, V
CBO
Emitter–Base Voltage, V
EBO
Continuous Collector Current, I
C
Total Device Dissipation (T
C
= +25
°
C, Note 1), P
D
Derate above 25
°
C
Storage Temperature Range, T
stg
Note 1. This device is designed for RF operation. The total device dissipation rating applies only
when the device is operated as an RF amplifier.
30V
60V
3V
1A
5W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
28.6mW/
°
C
–65
°
to +200
°
C
Electrical Characteristics:
(T
A
= +25
°
C, unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
Collector–Emitter Breakdown Voltage
V
(BR)CEO
V
(BR)CES
V
(BR)EBO
I
CBO
I
C
= 50mA, I
B
= 0
I
C
= 200mA, V
BE
= 0
I
E
= 1mA, I
C
= 0
V
CB
= 15V, I
E
= 0
30
–
–
V
60
–
–
V
Emitter–Base Breakdown Voltage
3
–
–
V
Collector Cutoff Current
–
–
0.01
mA
ON Characteristics
DC Current Gain
h
FE
V
CE
= 2V, I
C
= 400mA
10
–
–
–
Dynamic Characteristics
Output Capacitance
C
ob
V
CB
= 12.5V, I
E
= 0, f = 1MHz
–
35
70
pF
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