參數(shù)資料
型號(hào)： NTE320F
廠商： NTE Electronics, Inc.
英文描述： Silicon NPN RF Power Transistor 40W @ 175MHz
中文描述： 硅npn型射頻功率晶體管功率40W @ 175MHz時(shí)
文件頁數(shù)： 1/3頁
文件大?。?/td> 27K
代理商： NTE320F
NTE320/NTE320F
Silicon NPN RF Power Transistor
40W @ 175MHz
Description:
The NTE320 and NTE320F are silicon NPN power transistors designed for 12.5V VHF large–signal
amplifier applications required in commercial and industrial equipment operating to 300MHz.
Features:
Specified 12.5V, 175MHz Characteristics:
Output Power: 40W
Minimum Gain: 4.5dB
Efficiency: 70%
Available in Two Different Package Styles:
T72 Stud Mount: NTE320
W52K Flange Mount: NTE320F
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
CEO
Collector–Base Voltage, V
CBO
Emitter–Base Voltage, V
EBO
Continuous Collector Current, I
C
Total Device Dissipation (T
C
= +25
°
C, Note 1), P
D
Derate Above 25
°
C
Storage Temperature Range, T
stg
Stud Torque (NTE320 Only, Note 2)
18V
36V
4V
7A
80W
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460mW/
°
C
–65
°
to +200
°
C
6.5in. lb.
Note 1. These devices are designed for RF operation. The total device dissipation rating applies
only when the devices are operated as RF amplifiers.
Note 2. For repeated assembly, use 5in. lb.
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