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參數(shù)資料
| 型號： | NTE2588 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Quad Differential Comparator 20-LCCC -55 to 125 |
| 中文描述： | 硅NPN晶體管輸出的高清晰度電視水平 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 21K |
| 代理商： | NTE2588 |
NTE2588
Silicon NPN Transistor
Horizontal Output for HDTV
Features:
High Breakdown Voltage: V
(BR)CEO
= 1200V Min
Isolated TO220 Type Package
Absolute Maximum Ratings:
(T
A
= +25
°
C unless otherwise specified)
Collector–Base Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
Continuous
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Power Dissipation, P
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Thermal Resistance, Junction–to–Case, R
thJC
1500V
1200V
5V
30mA
100mA
2W
+150
°
C
–55
°
to +150
°
C
8.3
°
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics:
(T
C
= +25
°
C unless otherwise specified)
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain Bandwidth Product
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Collector–Base Breakdown Voltage
Collector–Emitter Breakdown Voltage
Emitter–Base Breakdown Voltage
Output Capacitance
Symbol
I
CBO
I
EBO
h
FE
f
T
V
CE(sat)
V
BE(sat)
V
(BR)CBO
I
C
= 100
μ
A, I
E
= 0
V
(BR)CEO
I
C
= 1mA, R
BE
=
∞
V
(BR)EBO
I
E
= 100
μ
A, I
C
= 0
C
ob
V
CB
= 100V, f = 1MHz
Test Conditions
V
CB
= 1200V, I
E
= 0
V
EB
= 4V, I
C
= 0
V
CE
= 5V, I
C
= 1.5A
V
CE
= 10V, I
C
= 1.5A
I
C
= 3mA, I
B
= 0.6mA
I
C
= 3mA, I
B
= 0.6mA
Min
–
–
10
–
–
–
1500
1200
5
–
Typ
–
Max
1
1
60
–
5
2
–
–
–
–
Unit
μ
A
μ
A
–
6
–
–
–
–
–
MHz
V
V
V
V
V
pF
2.0
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