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參數(shù)資料
| 型號： | NTE2590 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Silicon NPN Transistor High Voltage Amp/Switch |
| 中文描述： | 硅NPN晶體管高壓放大器/開關 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 20K |
| 代理商： | NTE2590 |
NTE2590
Silicon NPN Transistor
High Voltage Amp/Switch
Features:
High Breakdown Voltage, High Reliability
Low Output Capacitance
Wide ASO Range
Absolute Maximum Ratings:
(T
A
= +25
°
C unless otherwise specified)
Collector–Base Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
Continuous
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Power Dissipation, P
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1700V
900V
5V
50mA
150mA
1.2W
+150
°
C
–55
°
to +150
°
C
Electrical Characteristics:
(T
A
= +25
°
C unless otherwise specified)
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain–Bandwidth Product
Output Capacitance
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Collector Base Breakdown Voltage
Collector Emitter Breakdown Voltage
Emitter Base Breakdown Voltage
Symbol
I
CBO
I
EBO
h
FE
f
T
C
ob
V
CE(sat)
V
BE(sat)
V
(BR)CBO
I
C
= 1mA, I
E
= 0
V
(BR)CEO
I
C
= 1mA, R
BE
=
∞
V
(BR)EBO
I
E
= 1mA, I
C
= 0
Test Conditions
V
CB
= 900V, I
E
= 0
V
EB
= 4V, I
C
= 0
V
CE
= 5V, I
C
=2mA
V
CE
= 10V, I
C
= 2mA
V
CB
= 100V, f = 1MHz
I
C
= 5mA, I
B
= 1mA
I
C
=5A, I
B
= 1mA
Min
–
–
20
–
–
–
–
1700
900
5
Typ
–
–
50
6
2.0
–
–
–
–
–
Max
1.0
1.0
120
–
–
5
2
–
–
–
Unit
μ
A
μ
A
MHz
pF
V
V
V
V
V
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