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參數(shù)資料
| 型號(hào)： | NTE2572 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Silicon NPN Transistor High Current Switch |
| 中文描述： | 硅NPN晶體管大電流開關(guān) |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 21K |
| 代理商： | NTE2572 |
NTE2572
Silicon NPN Transistor
High Current Switch
Features:
Low Collector Emitter Saturation Voltage
High Current Capacity
Applications:
Relay Drivers
High Speed Inverters
Converters
Absolute Maximum Ratings:
(T
A
= +25
°
C unless otherwise specified)
Collector Base Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter Base Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
Continuous
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Power Dissipation, P
C
T
A
= +25
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
C
= +25
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
90V
80V
6V
7A
12A
1.65W
40W
+150
°
C
–55
°
to +150
°
C
Electrical Characteristics:
(T
A
= +25
°
C unless otherwise specified)
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Symbol
I
CBO
I
EBO
h
FE
Test Conditions
V
CB
= 80V, I
E
= 0
V
EB
= 4V, I
C
= 0
V
CE
= 2V, I
C
= 1A
V
CE
= 2V, I
C
= 4A
V
CE
= 5V, I
C
= 4A
I
C
= 4A, I
B
= 400mA
Min
–
–
100
30
–
–
Typ
–
–
–
–
20
–
Max
0.1
0.1
280
–
–
0.4
Unit
mA
mA
Gain–Bandwidth Product
Collector Emitter Saturation Volt-
age
f
T
MHz
V
V
CE(sat)
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