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參數(shù)資料
| 型號： | NTE2578 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | TRANSISTOR, SMT PMBT2222A NPN SWITCH, SOT23 |
| 中文描述： | 硅NPN晶體管電視機(jī)水平偏轉(zhuǎn)輸出 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 19K |
| 代理商： | NTE2578 |
NTE2578
Silicon NPN Transistor
TV Horizontal Deflection Output
Features:
Excellent Fall Time Permitting Efficient Drive with Less Internal Dissipation
Absolute Maximum Ratings:
(T
A
= +25
°
C unless otherwise specified)
Collector–Base Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
Continuous
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Dissipation (T
C
= +25
°
C), P
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
200V
60V
6V
4.5A
10A
30W
+150
°
C
–55
°
to +150
°
C
Electrical Characteristics:
(T
A
= +25
°
C unless otherwise specified)
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Symbol
I
CBO
I
EBO
h
FE
Test Conditions
V
CB
= 40V, I
E
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 5V, I
C
= 1A
V
CE
= 5V, I
C
= 4A
V
CE
= 5V, I
C
= 1A
I
C
= 4A, I
B
= 400mA
I
C
= 4A, I
B
= 400mA
V
(BR)CBO
I
C
= 5mA, I
E
= 0
V
(BR)CEO
I
C
= 5mA, R
BE
=
∞
V
(BR)EBO
I
C
= 5mA, I
C
= 0
t
f
V
CC
= 50V, V
BB
= 5V,
I
C
= 5A, I
B1
= –I
B2
= 500mA,
PW = 20
μ
s, Duty Cycle
≤
2.5%
Min
–
–
30
25
–
–
–
200
60
6
–
Typ
–
–
–
–
10
0.5
–
–
–
–
0.2
Max
0.1
0.1
60
–
–
1.0
1.5
–
–
–
0.5
Unit
mA
mA
Gain Bandwidth Product
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Collector–Base Breakdown Voltage
Collector–Emitter Breakdown Voltage
Emitter–Base Breakdown Voltage
Fall Time
f
T
MHz
V
V
V
V
V
μ
s
V
CE(sat)
V
BE(sat)
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